Structure and device characteristics of SrBi2Ta2O9-based nonvolatile random-access memories

MRS Bulletin

Volumn 21, Issue 7, 1996, Pages 33-39

  Scott, J F ^a   Ross, F M ^a   Paz De Araujo, C A ^a   Scott, M C ^a   Huffman, M ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ELECTRODES; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; NONVOLATILE STORAGE; PEROVSKITE; RANDOM ACCESS STORAGE; STRUCTURE (COMPOSITION); THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BARIUM STRONTIUM TITANATE; BREAKDOWN TIME DEPENDENCE; BREAKDOWN VOLTAGE DEPENDENCE; FERROELECTRIC FILMS; LEAD ZIRCONIUM TITANATE; MACROSCOPIC CONDUCTION; MACROSCOPIC ELECTROSTATICS; POLARIZATION FATIGUE; SWITCHING KINETICS;

STRONTIUM COMPOUNDS;

EID: 0030191021     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400035892     Document Type: Article

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