|
Volumn 415, Issue , 1996, Pages 189-194
|
Microstructure and properties of layered oxide thin films fabricated by MOCVD
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CHARACTERIZATION;
CRYSTALLINE MATERIALS;
FERROELECTRIC MATERIALS;
GRAIN SIZE AND SHAPE;
LEAKAGE CURRENTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MICROSTRUCTURE;
OXIDE SUPERCONDUCTORS;
PERMITTIVITY;
SILICON WAFERS;
SINGLE CRYSTALS;
SUBSTRATES;
CURIE TEMPERATURE;
DEPOSITION TEMPERATURE;
DIRECT LIQUID INJECTION METALLORGANIC;
FERROELECTRIC PROPERTIES;
NONVOLATILE RANDOM ACCESS MEMORY APPLICATIONS;
PHASE FORMATION;
THIN FILMS;
|
EID: 0029777759
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (17)
|
References (16)
|