Preparation and properties of ferroelectric Bi 2SrTa 2O 9 thin films for FeRAM using flash-MOCVD

Materials Research Society Symposium - Proceedings

Volumn 415, Issue , 1996, Pages 195-200

  Ami, T ^a   Hironaka, K ^a   Isobel, C ^a   Nagel, N ^a   Sugiyama, M ^a   Ikeda, Y ^a   Watanabe, K ^a   Machida, A ^a   Miura, K ^a   Tanaka, M ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC RANDOM ACCESS MEMORIES; FERROELECTRIC THIN FILMS; LIQUID DELIVERY METALLORGANIC CHEMICAL VAPOR DEPOSITION; LIQUID INJECTION PUMP; METALORGANIC DECOMPOSITION; TETRAHYDROFURAN; THERMAL OXIDATION;

ANNEALING; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; OXIDE SUPERCONDUCTORS; OXYGEN; SILICA; SILICON WAFERS; SUBSTRATES;

THIN FILMS;

EID: 0029754221     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)