-
1
-
-
0027913113
-
-
Electron. Lett., vol. 29, pp. 2217-2218, 1993.
-
D. Wake, D. J. Newson, M. J. Harlow, and I. D. Henning, Optically biased, edge coupled InP/InGaAs heterojunction phototransistors, Electron. Lett., vol. 29, pp. 2217-2218, 1993.
-
Optically Biased, Edge Coupled InP/InGaAs Heterojunction Phototransistors
-
-
Wake, D.1
Newson, D.J.2
Harlow, M.J.3
Henning, I.D.4
-
2
-
-
0030148504
-
-
Electron. Lett., vol. 32, pp. 1030-1032, 1996.
-
J. Van de Casteele, J. P. Vilcot, J. P. Gouy, F. Mollot, and D. Decoster, Electro-optical mixing in an edge coupled GalnAs/InP heterojunction phototransistor, Electron. Lett., vol. 32, pp. 1030-1032, 1996.
-
Electro-optical Mixing in An Edge Coupled GalnAs/InP Heterojunction Phototransistor
-
-
Van De Casteele, J.1
Vilcot, J.P.2
Gouy, J.P.3
Mollot, F.4
Decoster, D.5
-
3
-
-
0031098334
-
-
IEEE Microwave Guided Wave Lett., vol. 7, pp. 72-74, 1997.
-
C. P. Liu, A. J. Seeds, amd D. Wake, Two-terminal edge coupled InP/InGaAs heterojunction phototransistor optoelectronic mixer, IEEE Microwave Guided Wave Lett., vol. 7, pp. 72-74, 1997.
-
Two-terminal Edge Coupled InP/InGaAs Heterojunction Phototransistor Optoelectronic Mixer
-
-
Liu, C.P.1
Seeds, A.J.2
Wake, A.D.3
-
4
-
-
0032049967
-
-
J. Lightwave. Technol., vol. 16, pp. 605-609, 1998.
-
Y. Betser, D. Ritter, C. P. Liu, A. J. Seeds, and A. Madjar, A single-stage three-terminal heterojunction bipolar transistor optoelectronic mixer, J. Lightwave. Technol., vol. 16, pp. 605-609, 1998.
-
A Single-stage Three-terminal Heterojunction Bipolar Transistor Optoelectronic Mixer
-
-
Betser, Y.1
Ritter, D.2
Liu, C.P.3
Seeds, A.J.4
Madjar, A.5
-
5
-
-
33747297859
-
-
Semiconductors and Semimetals, Lightwave Communications Technology, Orlando, FL: Academic, pt. D, vol. 22, 1985, pp. 389-4147.
-
J. C. Campbell, Phototransistors for lightwave communications, Semiconductors and Semimetals, Lightwave Communications Technology, Orlando, FL: Academic, pt. D, vol. 22, 1985, pp. 389-4147.
-
Phototransistors for Lightwave Communications
-
-
Campbell, J.C.1
-
6
-
-
0020087871
-
-
IEEE Trans. Electron Devices, vol. ED-29, pp. 266-274, 1982.
-
R. A. Milano, P. D. Dapkus, and G. E. Stillman, An analysis if the performance of heterojunction phototransistors for fiber optic communications, IEEE Trans. Electron Devices, vol. ED-29, pp. 266-274, 1982.
-
An Analysis if the Performance of Heterojunction Phototransistors for Fiber Optic Communications
-
-
Milano, R.A.1
Dapkus, P.D.2
Stillman, G.E.3
-
7
-
-
0020087907
-
-
J. Appl. Phys., vol. 53, pp. 1203-1208, 1982.
-
J. C. Campbell and K. Ogawa, Heterojunction phototransistors for longwavelength optical receivers, J. Appl. Phys., vol. 53, pp. 1203-1208, 1982.
-
Heterojunction Phototransistors for Longwavelength Optical Receivers
-
-
Campbell, J.C.1
Ogawa, K.2
-
8
-
-
0028730689
-
-
IEEE J. Quantum Electron., vol. 30, pp. 2889-2895, 1994.
-
H. Fukano, Y. Takanashi, and M. Fujimoto, High-speed In-InGaAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflector, IEEE J. Quantum Electron., vol. 30, pp. 2889-2895, 1994.
-
High-speed In-InGaAs Heterojunction Phototransistors Employing A Nonalloyed Electrode Metal As A Reflector
-
-
Fukano, H.1
Takanashi, Y.2
Fujimoto, M.3
-
9
-
-
0022028118
-
-
Electron Lett., vol. 21, pp.'308-311, 1985.
-
N. Chand, P. A. Houston, and P.N. Robson, Novel high speed Ino saGao 47As/InP lateral phototransistor, Electron Lett., vol. 21, pp.'308-311, 1985.
-
Novel High Speed Ino SaGao 47As/InP Lateral Phototransistor
-
-
Chand, N.1
Houston, P.A.2
Robson, P.N.3
-
13
-
-
33747241712
-
-
in Methods for Modeling and Simulation ofGuided-Wave Optoelectronic Devices (Progress in Electromagnetics Research), W. P. Huang, Ed. Cambridge, MA: EMW.1995, vol. 10, PIER-10, pp. 123-186.
-
M. S. Stern, Finite difference analysis of planar optical waveguides, in Methods for Modeling and Simulation ofGuided-Wave Optoelectronic Devices (Progress in Electromagnetics Research), W. P. Huang, Ed. Cambridge, MA: EMW.1995, vol. 10, PIER-10, pp. 123-186.
-
Finite Difference Analysis of Planar Optical Waveguides
-
-
Stern, M.S.1
-
14
-
-
85008935454
-
-
in Tech. Dig. Proc. OSA/IEEE Conf. Integrated Photonics Research (IPR'95), Dana Point, CA, Feb. 1995, pp. 140-142.
-
M. S. Stern, C. L. Xu, F. Ma, and W. P. Huang, The use of a sparse matrix eigenmode solver in Semivectorial finite difference modeling of optical waveguides, in Tech. Dig. Proc. OSA/IEEE Conf. Integrated Photonics Research (IPR'95), Dana Point, CA, Feb. 1995, pp. 140-142.
-
The Use of A Sparse Matrix Eigenmode Solver in Semivectorial Finite Difference Modeling of Optical Waveguides
-
-
Stern, M.S.1
Xu, C.L.2
Ma, F.3
Huang, W.P.4
-
15
-
-
33747284079
-
-
in Properties of Indium Phosphide (EMIS Data Reviews Series no. 6). London, U.K.: INSPEC, 1991, pp. 416-418.
-
S. Adachi, Optical functions of InGaAsP: Tables, in Properties of Indium Phosphide (EMIS Data Reviews Series no. 6). London, U.K.: INSPEC, 1991, pp. 416-418.
-
Optical Functions of InGaAsP: Tables
-
-
Adachi, S.1
-
16
-
-
0029386211
-
-
J. Electron Mater., vol. 24, pp. 1357-1361, 1995.
-
D. Hahn, O. Jaschinski, H.-H. Wehmann, and A. Schlachetzki, Electron concentration dependence of absorption and refraction in n-InGaAs near the band edge, J. Electron Mater., vol. 24, pp. 1357-1361, 1995.
-
Electron Concentration Dependence of Absorption and Refraction in N-InGaAs Near the Band Edge
-
-
Hahn, D.1
Jaschinski, O.2
Wehmann, H.-H.3
Schlachetzki, A.4
-
17
-
-
34547217759
-
-
Phys. Rev. B., vol. 6, pp. 4370-4379, 1972.
-
P. B. Johnson and R. W. Christy, Optical constants of the noble metals, Phys. Rev. B., vol. 6, pp. 4370-4379, 1972.
-
Optical Constants of the Noble Metals
-
-
Johnson, P.B.1
Christy, R.W.2
-
18
-
-
0020003556
-
-
IEEE Electron Dev. Lett., vol. EDL-3, pp. 18-20, 1982.
-
T. H. Windhorn, L. W. Cook, and G. E. Stillman, The electron velocityfield characteristic for n-InGaAs at 300 K, IEEE Electron Dev. Lett., vol. EDL-3, pp. 18-20, 1982.
-
The Electron Velocityfield Characteristic for N-InGaAs at 300 K
-
-
Windhorn, T.H.1
Cook, L.W.2
Stillman, G.E.3
-
21
-
-
0028474008
-
-
Solid-State Electron., vol. 37, pp. 1455-1457, 1994.
-
S. S. De, A. K. Ghosh, A. K. Hajra, J. C. Halder, and M. Bera, Studies of temperature and concentration dependent minority carrier lifetime in heavily doped InGaAsP, Solid-State Electron., vol. 37, pp. 1455-1457, 1994.
-
Studies of Temperature and Concentration Dependent Minority Carrier Lifetime in Heavily Doped InGaAsP
-
-
De S, S.1
Ghosh, A.K.2
Hajra, A.K.3
Halder, J.C.4
Bera, M.5
-
22
-
-
0029232085
-
-
in IEEE Microwave Theory Tech. Symp. Dig., 1995, pp. 49-52.
-
L. E. M. de Barros, A. Paolella, P. R. Herczfeld, and P. Enquist, Analytical model with empirical verification for heterojunction bipolar transistors under illumination, in IEEE Microwave Theory Tech. Symp. Dig., 1995, pp. 49-52.
-
Analytical Model with Empirical Verification for Heterojunction Bipolar Transistors under Illumination
-
-
De Barros, L.E.M.1
Paolella, A.2
Herczfeld, P.R.3
Enquist, P.4
-
23
-
-
0026881081
-
-
Semiconduct. Sei. Technol., vol. 7, pp. 858-860, 1992.
-
P. Ambrée, B. Gruska, and K. Wandel, Dependence of electron diffusion length in p-InGaAs layers on the acceptor diffusion process, Semiconduct. Sei. Technol., vol. 7, pp. 858-860, 1992.
-
Dependence of Electron Diffusion Length in P-InGaAs Layers on the Acceptor Diffusion Process
-
-
Ambrée, P.1
Gruska, B.2
Wandel, K.3
-
24
-
-
0009777679
-
-
J. Appl. Phys., vol. 73, pp. 4444-4447, 1993.
-
A. Ouacha, Q. Chen, M. Willander, R. A. Logan, and T. TanbunEk, Recombination process and its effect on the dc performance of InP/InGaAs single heterojunction bipolar transistors, J. Appl. Phys., vol. 73, pp. 4444-4447, 1993.
-
Recombination Process and Its Effect on the Dc Performance of InP/InGaAs Single Heterojunction Bipolar Transistors
-
-
Ouacha, A.1
Chen, Q.2
Willander, M.3
Logan, R.A.4
Tanbunek, T.5
-
25
-
-
0026221357
-
-
IEEE Photon. Technol. Lett., vol. 3, pp. 820-822, 1991.
-
K. Kato, S. Hata, A. Kozen. J.-I. Yoshida, and K. Kawano, Highly efficient 40 GHz waveguide InGaAs p-i-n photodiode employing multimode waveguide structure, IEEE Photon. Technol. Lett., vol. 3, pp. 820-822, 1991.
-
Highly Efficient 40 GHz Waveguide InGaAs P-i-n Photodiode Employing Multimode Waveguide Structure
-
-
Kato, K.1
Hata, S.2
Kozen, A.3
Yoshida, J.-I.4
Kawano, K.5
-
26
-
-
0031348004
-
-
in Proc. IEEE 5th Int. Workshop High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO'97), Nov. 1997, pp. 205-210.
-
S. J. Woods, A. B. Walker, and D. Wake, Simulation of optically biased, edge coupled InP/InGaAs phototransistors, in Proc. IEEE 5th Int. Workshop High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO'97), Nov. 1997, pp. 205-210.
-
Simulation of Optically Biased, Edge Coupled InP/InGaAs Phototransistors
-
-
Woods, S.J.1
Walker, A.B.2
Wake, D.3
-
27
-
-
0032051176
-
-
Microwave and Optical Technol. Lett., vol. 17, pp. 408-412, 1998.
-
V. Magnin, J. Van de Casteele, J. P. Vilcot, J. Harari, J. P. Gouy, and D. Decoster, A three terminal edge coupled InGaAs/InP heterojunction phototransistor for multifunction operation, Microwave and Optical Technol. Lett., vol. 17, pp. 408-412, 1998.
-
A Three Terminal Edge Coupled InGaAs/InP Heterojunction Phototransistor for Multifunction Operation
-
-
Magnin, V.1
Van De Casteele, J.2
Vilcot, J.P.3
Harari, J.4
Gouy, J.P.5
Decoster, D.6
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