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Volumn 47, Issue 7 PART 2, 1999, Pages 1289-1296

Analysis of edge-coupled heterojunction phototransistors

Author keywords

Edge coupling; Heterojunction phototransistors

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT POLARIZATION; MATHEMATICAL MODELS; MILLIMETER WAVE DEVICES; OPTICAL WAVEGUIDES; OPTIMIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032666408     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.775468     Document Type: Article
Times cited : (4)

References (27)
  • 5
    • 33747297859 scopus 로고    scopus 로고
    • Semiconductors and Semimetals, Lightwave Communications Technology, Orlando, FL: Academic, pt. D, vol. 22, 1985, pp. 389-4147.
    • J. C. Campbell, Phototransistors for lightwave communications, Semiconductors and Semimetals, Lightwave Communications Technology, Orlando, FL: Academic, pt. D, vol. 22, 1985, pp. 389-4147.
    • Phototransistors for Lightwave Communications
    • Campbell, J.C.1
  • 13
    • 33747241712 scopus 로고    scopus 로고
    • in Methods for Modeling and Simulation ofGuided-Wave Optoelectronic Devices (Progress in Electromagnetics Research), W. P. Huang, Ed. Cambridge, MA: EMW.1995, vol. 10, PIER-10, pp. 123-186.
    • M. S. Stern, Finite difference analysis of planar optical waveguides, in Methods for Modeling and Simulation ofGuided-Wave Optoelectronic Devices (Progress in Electromagnetics Research), W. P. Huang, Ed. Cambridge, MA: EMW.1995, vol. 10, PIER-10, pp. 123-186.
    • Finite Difference Analysis of Planar Optical Waveguides
    • Stern, M.S.1
  • 15
    • 33747284079 scopus 로고    scopus 로고
    • in Properties of Indium Phosphide (EMIS Data Reviews Series no. 6). London, U.K.: INSPEC, 1991, pp. 416-418.
    • S. Adachi, Optical functions of InGaAsP: Tables, in Properties of Indium Phosphide (EMIS Data Reviews Series no. 6). London, U.K.: INSPEC, 1991, pp. 416-418.
    • Optical Functions of InGaAsP: Tables
    • Adachi, S.1
  • 26
    • 0031348004 scopus 로고    scopus 로고
    • in Proc. IEEE 5th Int. Workshop High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO'97), Nov. 1997, pp. 205-210.
    • S. J. Woods, A. B. Walker, and D. Wake, Simulation of optically biased, edge coupled InP/InGaAs phototransistors, in Proc. IEEE 5th Int. Workshop High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO'97), Nov. 1997, pp. 205-210.
    • Simulation of Optically Biased, Edge Coupled InP/InGaAs Phototransistors
    • Woods, S.J.1    Walker, A.B.2    Wake, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.