High-Speed InP-InGaAs Heterojunction Phototransistors Employing a Nonalloyed Electrode Metal as a Reflector

IEEE Journal of Quantum Electronics

Volumn 30, Issue 12, 1994, Pages 2889-2895

  Fukano, H ^a   Takanashi, Y ^a   Fujimoto, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; ELECTRIC VARIABLES MEASUREMENT; ELECTRODES; EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED OPTOELECTRONICS; LIGHT ABSORPTION; MIRRORS; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

HETEROJUNCTION PHOTOTRANSISTORS (HPT'S); QUANTUM EFFICIENCY;

PHOTOTRANSISTORS;

EID: 0028730689     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.362721     Document Type: Article

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