Novel High-Speed ln0.53Ga0.47As/lnP Lateral Phototransistor

Electronics Letters

Volumn 21, Issue 7, 1985, Pages 308-310

  Chand, N ^a   Houston, P A ^a   Robson, P N ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Photoelectric devices; Phototransistors

Indexed keywords

FIBER OPTICS;

LATERAL PHOTOTRANSISTOR;

TRANSISTORS, PHOTOSENSITIVE;

EID: 0022028118     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19850220     Document Type: Article

References (9)

1. MILANO, R. A., DAPKUS, P. D., and STILLMAN, G. E.: “An analysis of the performance of the heterojunction phototransistors for fibre optic communications”, IEEE Trans., 1982, ED-29, p. 266
2. CAMPBELL, J. C., and OGAWA, K.: “Heterojunction phototransistors for long wavelength optical receivers”, J. Appl. Phys., 1982, 53, p. 1203
3. ALAVI, K. T., and FONSTAD, C. G.: “Recent advances in InGaAsP/InP phototransistors”, SPIE, 1981, 272, p. 38
4. CHAND, N., HOUSTON, P. A., and ROBSON, P. N.: “Gain of a heterojunction bipolar phototransistor”, IEEE Trans., ED (to be published)
5. BRAIN, M. C., and SMITH, D. R.: “Phototransistors, APD-FET, and PINFET optical receivers for 1-1.6 μm wavelength”, “Recent advances in InGaAsP/InP phototransistors”, 1983, ED-30, p. 390
6. CAMPBELL, J. C., BURRUS, C. A., DENTAI, A. G., and OGAWA, K.: “Small area high speed InP/InGaAs phototransistor”, Appl. Phys. Lett., 1981, 39, p. 820
7. 0.45 on structured InP substrates”, J. Cryst. Growth, 1983, 61, p. 53
8. BENSON, T. M., SYRBU, A. V., CHAND, N., and HOUSTON, P. A.: “Singlemode InGaAsP/InP buried waveguide structures grown on channelled (lll)B InP substrates”, Electron. Lett., 1982,18, pp. 812-813
9. 0.47As on InP substrate”, Electron. Lett., 1981, 17, pp. 726-727.