Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge

Journal of Electronic Materials

Volumn 24, Issue 10, 1995, Pages 1357-1361

  Hahn, D ^a   Jaschinski, O ^a   Wehmann, H H ^a   Schlachetzki, A ^a   Von Ortenberg, M ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

Author keywords

Absorption coefficient; band gap shift; electron concentration dependence; n In0.53Ga0.47As; refractive index

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; LIGHT ABSORPTION; REFRACTIVE INDEX;

ABSORPTION COEFFICIENT; BAND EDGE; BAND GAP SHIFT; INDIUM GALLIUM ARSENIDE;

SEMICONDUCTING INTERMETALLICS;

EID: 0029386211     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02655448     Document Type: Article

References (27)

1. Dispersion of the Index of Refraction Near the Absorption Edge of Semiconductors
2. Low temperature photoluminescence of n-type GaInAsP layers grown on InP by liquid phase epitaxy
3. Absorption Edge of Impure Gallium Arsenide
4. Urbach rule
5. Exponential tails in the density of states