A three-terminal edge-coupled InGaAs/InP heterojunction phototransistor for multifunction operation

Microwave and Optical Technology Letters

Volumn 17, Issue 6, 1998, Pages 408-412

  Magnin, V ^a   Van De Casteele, J ^a   Vilcot, J P ^a   Harari, J ^a   Gouy, J P ^a   Decoster, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Heterojunction bipolar transistors; Microwave optoelectronics; Millimeter wave opto electronics; Optoelectronic mixing; Phototransistors

Indexed keywords

GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; MILLIMETER WAVE DEVICES; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE;

MICROWAVE OPTOELECTRONICS;

PHOTOTRANSISTORS;

EID: 0032051176     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(19980420)17:6<408::AID-MOP18>3.0.CO;2-W     Document Type: Article

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