Optically-biased, edge-coupled InP/InGaAs heterojunction phototransistosr

Electronics Letters

Volumn 29, Issue 25, 1993, Pages 2217-2219

  Wake, D ^a   Newson, D J ^a   Harlow, M J ^a   Henning, I D ^a  

^a MARTLESHAM HEATH   (United Kingdom)

Author keywords

Phototransistor

Indexed keywords

AMPLIFICATION; EPITAXIAL GROWTH; FIBER OPTICS; HETEROJUNCTIONS; OPTICAL COMMUNICATION; OPTICAL DESIGN; OPTICAL LINKS; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SIGNAL RECEIVERS; SPURIOUS SIGNAL NOISE;

EPILAYERS; HETEROJUNCTION PHOTOTRANSISTORS; LIGHTWAVE SYSTEMS; OPTICAL ACCESS; OPTICAL COUPLING;

PHOTOTRANSISTORS;

EID: 0027913113     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19931489     Document Type: Article

References (7)

1. CAMPBELL, J.C., DENTAI, A.G., BURRUS, C.A., and FERGUSON, J.F.: ‘High sensitivity InP/InGaAs heterojunction phototransistors’, Electron. Lett., 1980, 16, pp. 713-714
2. MILANO, R.A., DAPKUS, P.D., and STILLMAN, G.E.: ‘An analysis of the performance of heterojunction phototransistors for fibre optic communcations’, IEEE Trans., 1982, ED-29, pp. 266-274
3. SUEMATSU, R.A., and OGAWA, H.: ‘Noise performance of MMIC HBTs as photodetectors’. 23rd European Microwave Conf. Proc., 1993, pp. 311-313
4. CARRUTHERS, T.F., DULING, I.N., AINA, O., MATTINGLY, M., and SERIO, M.: ‘Responses of InP/InGaAs/InP heterojunction bipolar transistors to 1530 and 620nm ultrafast optical pulses’, Appl. Phys. Lett., 1991, 59, pp. 327-329
5. CAMPBELL, J.C., BURRUS, C.A., DENTAI, A.G., and OGAWA, K.: ‘Small-area high-speed InP/InGaAs phototransistor’, Appl. Phys. Lett., 1981, 39, pp. 820-821
6. SCOTT, D.C., PLANT, D.V., and FETTERMAN, H. R.: ‘60GHz sources using optically driven heterojunction bipolar phototransistors’, Appl. Phys. Lett., 1992, 61, pp. 1-3
7. WAKE, D., SPOONER, T.P., PERRIN, S.D., and HENNING, I.D.: ‘50GHz InGaAs edge-coupled pin photodetector’, Electron. Lett., 1991, 27, pp. 1073-1074