Recombination process and its effect on the dc performance of InP/InGaAs single-heterojunction bipolar transistors

Journal of Applied Physics

Volumn 73, Issue 9, 1993, Pages 4444-4447

  Ouacha, A ^a   Chen, Q ^a   Willander, M ^a   Logan, R A ^b   Tanbun Ek, T ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009777679     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.354070     Document Type: Article

References (9)

1. Indium Phosphide: Crystal Growth and Characterization