Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor

Electronics Letters

Volumn 32, Issue 11, 1996, Pages 1030-1032

  Van De Casteele, J ^a   Vilcot, J P ^a   Gouy, J P ^a   Mollot, F ^b   Decoster, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

Heterojunction bipolar transistors; Optoelectronic devices; Phototransistors

Indexed keywords

AMPLITUDE MODULATION; DEMODULATION; HETEROJUNCTION BIPOLAR TRANSISTORS; LASER BEAMS; MICROWAVES; MOBILE TELECOMMUNICATION SYSTEMS; OPTOELECTRONIC DEVICES; RADIO LINKS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTROOPTICAL MIXING; HETEROJUNCTION PHOTOTRANSISTORS; OPTICAL DEMODULATION;

PHOTOTRANSISTORS;

EID: 0030148504     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960636     Document Type: Article

References (4)

1. WAKE, D., NEWSON, D.J., HARLOW. M.J., and HENNING. I.D.: 'Optically biased, edge-coupled InP/InGaAs heterojunction phototransistor', Electron. Lett., 1993, 29, (25), pp. 2217-2219
2. CAMPBELL, J.C., DENTAI, A.G., BURRUS, C.A., and FERGUSON. J.F.: 'High sensitivity InP/InGaAs heterojunction phototransitors', Electron. Lett., 1980, 16, (18), pp. 713-714
3. UREY, Z., WAKE, D., NEWSON, D.J., and HENNING, I.D.: 'Comparison of InGaAs transistors as optoelectronic mixers'. Electron. Lett., 1993, 29, (20), pp. 1796-1797
4. FUKANO, H., TAKANASHI, Y., and FUJIMOTO, M.: 'High-speed InP-GaInAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflector', IEEE J. Quantum Electron., 1994, 30, (12), pp. 2889-2895