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Volumn 7, Issue 6, 1992, Pages 858-860
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Dependence of the electron diffusion length in p-InGaAs layers on the acceptor diffusion process
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACCEPTORS;
DIFFUSION LENGTH;
INDIUM GALLIUM ARSENIDE;
JUNCTION DEPTHS;
DIFFUSION - MATHEMATICAL MODELS;
ELECTRONS - DIFFUSION;
ELECTRONS - TRANSPORT PROPERTIES;
MATHEMATICAL TECHNIQUES - NUMERICAL METHODS;
SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;
SEMICONDUCTING INTERMETALLICS;
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EID: 0026881081
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/7/6/021 Document Type: Article |
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Times cited : (7)
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References (0)
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