Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 679-683

  Shen, A ^a   Matsukura, F ^a   Guo, S P ^a   Sugawara, Y ^a   Ohno, H ^a   Tani, M ^b   Abe, H ^b   Liu, H C ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b Ministry of Posts and Telecommunications   (Japan)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE OPERATIONS; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR GROWTH;

CURIE LIFETIME; TRANSIENT REFLECTIVITY MEASUREMENTS;

MAGNETIC SEMICONDUCTORS;

EID: 0032660318     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01447-X     Document Type: Article

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