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Volumn 130-132, Issue , 1998, Pages 382-386

Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study

(6) Shen, A a Ohno, H a Horikoshi, Y a Guo, S P a Ohno, Y a Matsukura, F a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PRESSURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SUBSTRATES; THERMAL EFFECTS;

MOLECULAR BEAM EQUIVALENT PRESSURE RATIO;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 18744424414 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00087-7 Document Type: Article

Times cited : (12)

References (12)

1
- 0023965427
- F.W. Smith A.R. Calawa C.L. Chen M.J. Manfra L.J. Mahoney IEEE Trans. Electron Device Lett. EDL–9 1988 77
- (1988) IEEE Trans. Electron Device Lett. , vol.EDL–9 , pp. 77
- Smith, F.W.¹ Calawa, A.R.² Chen, C.L.³ Manfra, M.J.⁴ Mahoney, L.J.⁵

2
- 0001155241
- M.R. Melloch N. Otsuka J.M. Woodall A.C. Warren J.L. Freeouf Appl. Phys. Lett. 57 1990 1531
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1531
- Melloch, M.R.¹ Otsuka, N.² Woodall, J.M.³ Warren, A.C.⁴ Freeouf, J.L.⁵

3
- 0025256804
- B.J. Lin C.P. Kocot D.E. Mars R. Jaeger IEEE Trans. Electron Devices ED–37 1990 46
- (1990) IEEE Trans. Electron Devices , vol.ED–37 , pp. 46
- Lin, B.J.¹ Kocot, C.P.² Mars, D.E.³ Jaeger, R.⁴

4
- 0027644441
- D.C. Look Thin Solid Films 231 1993 61
- (1993) Thin Solid Films , vol.231 , pp. 61
- Look, D.C.¹

5
- 0027767072
- G.L. Witt Mater. Sci. Eng. B 22 1993 9
- (1993) Mater. Sci. Eng. B , vol.22 , pp. 9
- Witt, G.L.¹

6
- 0009770806
- M.R. Melloch I. Lahiri D.D. Nolte J.C.P. Chang E.S. Harmon J.M. Woodall N.Y. Li C.W. Tu J. Vac. Sci. Technol. B 14 1996 2271
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 2271
- Melloch, M.R.¹ Lahiri, I.² Nolte, D.D.³ Chang, J.C.P.⁴ Harmon, E.S.⁵ Woodall, J.M.⁶ Li, N.Y.⁷ Tu, C.W.⁸

7
- 0008005706
- J.P. Ibbetson R.P. Mirin U.K. Mishra A.C. Gossard J. Vac. Sci. Technol. B 12 1994 1050
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 1050
- Ibbetson, J.P.¹ Mirin, R.P.² Mishra, U.K.³ Gossard, A.C.⁴

8
- 0043012136
- R.P. Mirin J.P. Ibbetson U.K. Mishra A.C. Gossard Appl. Phys. Lett. 65 1994 2335
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2335
- Mirin, R.P.¹ Ibbetson, J.P.² Mishra, U.K.³ Gossard, A.C.⁴

9
- 0000686188
- M. Missous J. Appl. Phys. 78 1995 4467
- (1995) J. Appl. Phys. , vol.78 , pp. 4467
- Missous, M.¹

10
- 0030189469
- M. Missous Microelectron. J. 27 1996 393
- (1996) Microelectron. J. , vol.27 , pp. 393
- Missous, M.¹

11
- 0001061773
- C.T. Foxon B.A. Joyce Surf. Sci. 50 1975 434
- (1975) Surf. Sci. , vol.50 , pp. 434
- Foxon, C.T.¹ Joyce, B.A.²

12
- 0342991744
- J.H. Neave P.J. Dobson B.A. Joyce J. Zhang Appl. Phys. Lett. 47 1985 100
- (1985) Appl. Phys. Lett. , vol.47 , pp. 100
- Neave, J.H.¹ Dobson, P.J.² Joyce, B.A.³ Zhang, J.⁴

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