Electrical and structural properties of LT-GaAs: influence of As/Ga flux ratio and growth temperature

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 485-490

  Luysberg, M ^a   Sohn, H ^a   Prasad, A ^a   Specht, P ^a   Fujioka, H ^a   Klockenbrink, R ^a   Weber, E R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTOR GROWTH; TEMPERATURE;

BAND CONDUCTION; BEAM EQUIVALENT PRESSURE; STRUCTURAL PROPERTIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030646994     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)