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T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, presented at the Spring Meeting of the Japan Society of Applied Physics (JSAP) 29aW-1, March 1996; T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, Y. Otuka, the 9th Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August 1996, J. Cryst. Growth 175 (1) (1997) 1063; T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, J. Appl. Phys. 81 (1997) 4865.
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T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, presented at the Spring Meeting of the Japan Society of Applied Physics (JSAP) 29aW-1, March 1996; T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, Y. Otuka, the 9th Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August 1996, J. Cryst. Growth 175 (1) (1997) 1063; T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, J. Appl. Phys. 81 (1997) 4865.
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T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, presented at the Spring Meeting of the Japan Society of Applied Physics (JSAP) 29aW-1, March 1996; T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, Y. Otuka, the 9th Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August 1996, J. Cryst. Growth 175 (1) (1997) 1063; T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, J. Appl. Phys. 81 (1997) 4865.
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0347646738
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March
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Other group are also studying GaMnAs independently: F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano, Y. Sugawara, the spring Meeting of JSAP 29aW-3, March 1996; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, H. Iye, Appl. Phys. Lett. 69 (1996) 363; Y. Nishikawa, J. Yoshino, the 15th Electronic Materials Symposium, paper-J3 Izu-Nagaoka, July 1996; J. De. Boeck, A. Van Esch, G. Borghs, the 9th Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August 1996.
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(1996)
Spring Meeting of JSAP 29aW-3
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Matsukura, F.1
Shen, A.2
Oiwa, A.3
Ohno, H.4
Katsumoto, S.5
Iye, H.6
Sugano, S.7
Sugawara, Y.8
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19
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0009501328
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Other group are also studying GaMnAs independently: F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano, Y. Sugawara, the spring Meeting of JSAP 29aW-3, March 1996; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, H. Iye, Appl. Phys. Lett. 69 (1996) 363; Y. Nishikawa, J. Yoshino, the 15th Electronic Materials Symposium, paper-J3 Izu-Nagaoka, July 1996; J. De. Boeck, A. Van Esch, G. Borghs, the 9th Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August 1996.
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Iye, H.7
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20
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0346385940
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paper-J3 Izu-Nagaoka, July
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Other group are also studying GaMnAs independently: F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano, Y. Sugawara, the spring Meeting of JSAP 29aW-3, March 1996; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, H. Iye, Appl. Phys. Lett. 69 (1996) 363; Y. Nishikawa, J. Yoshino, the 15th Electronic Materials Symposium, paper-J3 Izu-Nagaoka, July 1996; J. De. Boeck, A. Van Esch, G. Borghs, the 9th Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August 1996.
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15th Electronic Materials Symposium
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Nishikawa, Y.1
Yoshino, J.2
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21
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0347016035
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Malibu, USA, August
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Other group are also studying GaMnAs independently: F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano, Y. Sugawara, the spring Meeting of JSAP 29aW-3, March 1996; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, H. Iye, Appl. Phys. Lett. 69 (1996) 363; Y. Nishikawa, J. Yoshino, the 15th Electronic Materials Symposium, paper-J3 Izu-Nagaoka, July 1996; J. De. Boeck, A. Van Esch, G. Borghs, the 9th Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August 1996.
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9th Int. Conf. on Molecular Beam Epitaxy
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