Selective dry etching of III-V nitrides in Cl2/Ar, CH4/H2/Ar, ICI/Ar, and IBr/Ar

Journal of the Electrochemical Society

Volumn 143, Issue 10, 1996, Pages

  Vartuli, C B ^a   Pearton, S J ^a   MacKenzie, J D ^a   Abernathy, C R ^a   Shul, R J ^b  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; BOND STRENGTH (MATERIALS); ELECTRON CYCLOTRON RESONANCE; NITRIDES; PLASMAS; REACTIVE ION ETCHING; TERNARY SYSTEMS;

REACTIVE ION PLASMAS; SELECTIVE DRY ETCHING;

PLASMA ETCHING;

EID: 0030263979     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837160     Document Type: Article

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