Silicon single-electron devices

International Journal of Electronics

Volumn 86, Issue 5, 1999, Pages 605-639

  Takahashi, Yasuo ^a   Fujiwara, Akira ^a   Nagase, Masao ^a   Namatsu, Hideo ^a   Kurihara, Kenji ^a   Iwadate, Kazumi ^a   Murase, Katsumi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ETCHING; OXIDATION; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

PATTERN-DEPENDENT OXIDATION; SILICON SINGLE-ELECTRON TRANSISTORS (SET);

TRANSISTORS;

EID: 0032629333     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072199133283     Document Type: Article

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