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Volumn 86, Issue 5, 1999, Pages 605-639

Silicon single-electron devices

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ETCHING; OXIDATION; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

EID: 0032629333     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072199133283     Document Type: Article
Times cited : (30)

References (77)
  • 1
    • 0000180240 scopus 로고    scopus 로고
    • Boltzman machine neuron circuit using single-electron tunneling
    • Akazawa, M., and Amemiya, Y., 1997, Boltzman machine neuron circuit using single-electron tunneling. Applied Physics Letters, 70, 670-672.
    • (1997) Applied Physics Letters , vol.70 , pp. 670-672
    • Akazawa, M.1    Amemiya, Y.2
  • 2
    • 21544435847 scopus 로고
    • Coulomb blockade in silicon tunnel junction device
    • Ali, D., and Ahmed, H., 1994, Coulomb blockade in silicon tunnel junction device. Applied Physics Letters, 64, 2119-2120.
    • (1994) Applied Physics Letters , vol.64 , pp. 2119-2120
    • Ali, D.1    Ahmed, H.2
  • 5
    • 0022661686 scopus 로고
    • Coulomb blockade of the single-electron tunneling, and coherent oscillations in small tunnel junctions
    • Averin, D.V., and Likharev, K. K., 1986, Coulomb blockade of the single-electron tunneling, and coherent oscillations in small tunnel junctions. Journal of Low Temperature Physics, 62, 345-373.
    • (1986) Journal of Low Temperature Physics , vol.62 , pp. 345-373
    • Averin, D.V.1    Likharev, K.K.2
  • 6
    • 0000113067 scopus 로고
    • Single electronics: A correlated transfer of single electrons and Cooper pairs in system of small tunnel junctions
    • B. L. Altshuler, P. A. Lee, and R. A. Webb, Amsterdam: Elsevier
    • Averin, D.V., and Likharev, K. K., 1991a, Single electronics: A correlated transfer of single electrons and Cooper pairs in system of small tunnel junctions. In B. L. Altshuler, P. A. Lee, and R. A. Webb (Eds). Mesoscopic Phenomena in Solids (Amsterdam: Elsevier), pp. 173-271.
    • (1991) Mesoscopic Phenomena in Solids , pp. 173-271
    • Averin, D.V.1    Likharev, K.K.2
  • 7
    • 0002412043 scopus 로고
    • Possible applications of the single charge tunneling
    • H. Grabert, and M. H. Devoret, New York: Plenum
    • Averin, D.V, and Likharev, K. K., 1991b, Possible applications of the single charge tunneling. In H. Grabert, and M. H. Devoret (Eds). Single Charging Tunneling (New York: Plenum), pp. 311-332.
    • (1991) Single Charging Tunneling , pp. 311-332
    • Averin, D.V.1    Likharev, K.K.2
  • 8
    • 0029637854 scopus 로고
    • Silicon on insulator material technology
    • Bruel, M., 1995, Silicon on insulator material technology. Electronics Letters, 31, 1201-1202.
    • (1995) Electronics Letters , vol.31 , pp. 1201-1202
    • Bruel, M.1
  • 9
    • 0041928903 scopus 로고
    • Electronic structure of ultrasmall quantum-well boxes
    • Bryant, G.W., 1987, Electronic structure of ultrasmall quantum-well boxes. Physical Review Letters, 59, 1140-1143.
    • (1987) Physical Review Letters , vol.59 , pp. 1140-1143
    • Bryant, G.W.1
  • 12
    • 0005304553 scopus 로고
    • Localized-state interactions in metal-oxide-semiconductor tunnel diodes
    • Farmer, K. R., Rogers, C. T, and Buhrman, R. A., 1987, Localized-state interactions in metal-oxide-semiconductor tunnel diodes. Physical Review Letters, 58, 2255-2258.
    • (1987) Physical Review Letters , vol.58 , pp. 2255-2258
    • Farmer, K.R.1    Rogers, C.T.2    Buhrman, R.A.3
  • 15
    • 0001630171 scopus 로고
    • Observation of single-electron charging effects in small tunnel junctions
    • Fulton, T A., and Dolan, G. J., 1987, Observation of single-electron charging effects in small tunnel junctions. Physical Review Letters, 59, 109-112.
    • (1987) Physical Review Letters , vol.59 , pp. 109-112
    • Fulton, T.A.1    Dolan, G.J.2
  • 16
    • 0000851152 scopus 로고    scopus 로고
    • Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor
    • Fujiwara, A., Takahashi, Y., and Murase, K., 1997, Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor, Physical Review Letters, 78, 1532-1535.
    • (1997) Physical Review Letters , vol.78 , pp. 1532-1535
    • Fujiwara, A.1    Takahashi, Y.2    Murase, K.3
  • 17
    • 0001670467 scopus 로고
    • Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands
    • Fujiwara, A., Takahashi, Y, Murase, K., and Tabe, M., 1995, Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands. Applied Physics Letters, 67, 2957-2859.
    • (1995) Applied Physics Letters , vol.67 , pp. 2859-2957
    • Fujiwara, A.1    Takahashi, Y.2    Murase, K.3    Tabe, M.4
  • 20
    • 0031077575 scopus 로고    scopus 로고
    • A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel
    • Guo, L., Leobandung, E., and Chou, S.Y., 1997, A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel. Applied Physics Letters, 70, 850-852.
    • (1997) Applied Physics Letters , vol.70 , pp. 850-852
    • Guo, L.1    Leobandung, E.2    Chou, S.Y.3
  • 21
    • 0029405124 scopus 로고
    • Examination of correlation of surface morphologies of top-silicon and buried oxide layers in high-temperature-annealed separation by implanted oxygen wafers
    • Ishiyama, T, and Nagase, M., 1995, Examination of correlation of surface morphologies of top-silicon and buried oxide layers in high-temperature-annealed separation by implanted oxygen wafers. Japanese Journal of Applied Physics, 34, 6019-6020.
    • (1995) Japanese Journal of Applied Physics , vol.34 , pp. 6019-6020
    • Ishiyama, T.1    Nagase, M.2
  • 23
    • 0017998279 scopus 로고
    • C.M.O.S. Devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
    • 2 layers formed by oxygen implantation into silicon. Electronics Letters, 14, 593-594.
    • (1978) Electronics Letters , vol.14 , pp. 593-594
    • Izumi, K.1    Doken, M.2    Ariyishi, H.3
  • 24
    • 0023855615 scopus 로고
    • Two-dimensional thermal oxidation of silicon-II. Modeling stress effects in wet oxides
    • Kao, D., McVittie, J. P., Nix, W D., and Saraswat, K. C., 1988, Two-dimensional thermal oxidation of silicon-II. Modeling stress effects in wet oxides. IEEE Transactions of Electron Devices, 35, 25-37.
    • (1988) IEEE Transactions of Electron Devices , vol.35 , pp. 25-37
    • Kao, D.1    McVittie, J.P.2    Nix, W.D.3    Saraswat, K.C.4
  • 25
    • 0002747118 scopus 로고
    • Artificial atoms
    • Kastner, M. A., 1993, Artificial atoms. Physics Today, 46, 24-31.
    • (1993) Physics Today , vol.46 , pp. 24-31
    • Kastner, M.A.1
  • 27
    • 0000547463 scopus 로고    scopus 로고
    • Si nanostructures fabricated by electron beam lithography combined with image reversal process using electron cyclotron resonance plasma oxidation
    • Kurihara, K., Iwadate, K., Namatsu, H., Nagase, M., and Murase, K., 1995 b, Si nanostructures fabricated by electron beam lithography combined with image reversal process using electron cyclotron resonance plasma oxidation. Journal of Vacuum Science and Technology, B13, 2170-2174.
    • Journal of Vacuum Science and Technology , vol.B13 , pp. 2170-2174
    • Kurihara, K.1    Iwadate, K.2    Namatsu, H.3    Nagase, M.4    Murase, K.5
  • 29
    • 0042426735 scopus 로고    scopus 로고
    • Sub-10-nm Si lines fabricated using shifted mask patterns controlled with electron beam lithography and KOH anisotropic etching
    • Kurihara, K., Namatsu, H., Nagase, M., and Makino, T, 1996, Sub-10-nm Si lines fabricated using shifted mask patterns controlled with electron beam lithography and KOH anisotropic etching. Japanese Journal of Applied Physics, 35, 6668-6672.
    • (1996) Japanese Journal of Applied Physics , vol.35 , pp. 6668-6672
    • Kurihara, K.1    Namatsu, H.2    Nagase, M.3    Makino, T.4
  • 30
    • 0031073652 scopus 로고    scopus 로고
    • Room temperature operated single electron transistor fabricated by electron beam nanolithography
    • Kurihara, K., Namatsu, H., Nagase, M., and Makino, T, 1997, Room temperature operated single electron transistor fabricated by electron beam nanolithography. Microelectronics Engineering, 35, 261-264.
    • (1997) Microelectronics Engineering , vol.35 , pp. 261-264
    • Kurihara, K.1    Namatsu, H.2    Nagase, M.3    Makino, T.4
  • 33
    • 13744260744 scopus 로고
    • Bistable saturation in coupled quantum dots for quantum cellular automata
    • Lent, C. S., Tüugaw, P. D., and Pürüd, W., 1993, Bistable saturation in coupled quantum dots for quantum cellular automata. Applied Physics Letters, 62, 714-716.
    • (1993) Applied Physics Letters , vol.62 , pp. 714-716
    • Lent, C.S.1    Tüugaw, P.D.2    Pürüd, W.3
  • 35
    • 0022059983 scopus 로고
    • Theory of the Bloch-wave oscillations in small Josephson junctions
    • Likharev, K. K., 1985, Theory of the Bloch-wave oscillations in small Josephson junctions. Journal of Low Temperature Physics, 59, 347-382.
    • (1985) Journal of Low Temperature Physics , vol.59 , pp. 347-382
    • Likharev, K.K.1
  • 36
    • 33744733611 scopus 로고
    • Single-electron transistors: Electrostatic analogs of the DC squids
    • Likharev, K. K., 1987, Single-electron transistors: electrostatic analogs of the DC squids. IEEE Transactions of Magnetics, 23, 1142-1145.
    • (1987) IEEE Transactions of Magnetics , vol.23 , pp. 1142-1145
    • Likharev, K.K.1
  • 38
    • 0002433791 scopus 로고
    • Coulomb blockade in the inversion layer of a Si metal-oxide-semiconductor field-effect transistor with a dual-gate structure
    • Matsuoka, H., Ichiguchi, T, Yoshimura, T, and TAkeda, E., 1994, Coulomb blockade in the inversion layer of a Si metal-oxide-semiconductor field-effect transistor with a dual-gate structure. Applied Physics Letters, 64, 586-588.
    • (1994) Applied Physics Letters , vol.64 , pp. 586-588
    • Matsuoka, H.1    Ichiguchi, T.2    Yoshimura, T.3    Takeda, E.4
  • 40
    • 11944259150 scopus 로고
    • Single-electron charging and periodic conductance resonances in GaAs nanostructures
    • Meirav, U., Kastner, M. A., and Wind, S. J., 1990, Single-electron charging and periodic conductance resonances in GaAs nanostructures. Physical Review Letters, 65, 771-774.
    • (1990) Physical Review Letters , vol.65 , pp. 771-774
    • Meirav, U.1    Kastner, M.A.2    Wind, S.J.3
  • 42
    • 0030383850 scopus 로고    scopus 로고
    • Experimental study of carrier velocity overshoot on sub-0.1 pm devices—physical limitation of MOS structures
    • Mizuno, T, and Ohba, R., 1996, Experimental study of carrier velocity overshoot on sub-0.1 pm devices—physical limitation of MOS structures. Technical Digest of International Electron Devices Meeting, 109-112.
    • (1996) Technical Digest of International Electron Devices Meeting , pp. 109-112
    • Mizuno, T.1    Ohba, R.2
  • 45
    • 0001551483 scopus 로고    scopus 로고
    • Room temperature operation of Si single-electron memory with self-aligned floating dot gate
    • Nakajima, A., Futatsugi, T, Kosemura, K., Fukano, T, and Yokovama, N., 1997, Room temperature operation of Si single-electron memory with self-aligned floating dot gate. Applied Physics Letters, 70, 1742-1744.
    • (1997) Applied Physics Letters , vol.70 , pp. 1742-1744
    • Nakajima, A.1    Futatsugi, T.2    Kosemura, K.3    Fukano, T.4    Yokovama, N.5
  • 48
    • 0001469693 scopus 로고
    • SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter
    • Nakashima, S., and Izumi, K., 1991, SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter. Nuclear Instruments and Methods in Physics Research, B55, 847-851.
    • (1991) Nuclear Instruments and Methods in Physics Research , vol.B55 , pp. 847-851
    • Nakashima, S.1    Izumi, K.2
  • 50
    • 0345043136 scopus 로고    scopus 로고
    • Operation of single-electron logic devices
    • K. Ismail, S. Bandyopadhyay, and J. P. Leburton, London: Imperial College Press
    • Nakazato, K., 1997, Operation of single-electron logic devices. In K. Ismail, S. Bandyopadhyay, and J. P. Leburton (Eds). Proceedings of the International Conference on Quantum Device and Circuits (London: Imperial College Press), pp. 179-187.
    • (1997) Proceedings of the International Conference on Quantum Device and Circuits , pp. 179-187
    • Nakazato, K.1
  • 54
    • 36449005681 scopus 로고
    • Dimensional limitation of silicon nanolines resulting from pattern distortion due to surface tension of rinse water
    • Namatsu, H., Kurihara, K., Nagase, M., Iwadate, K., and Murase, K., 1995c, Dimensional limitation of silicon nanolines resulting from pattern distortion due to surface tension of rinse water. Applied Physics Letters, 66, 2655-2657.
    • (1995) Applied Physics Letters , vol.66 , pp. 2655-2657
    • Namatsu, H.1    Kurihara, K.2    Nagase, M.3    Iwadate, K.4    Murase, K.5
  • 56
    • 0001127448 scopus 로고    scopus 로고
    • Fabrication of 2-nm-wide silicon quantum wires through a combination of a partially-shifted resist pattern and orientation-dependent etching
    • Namatsu, H., Kurihara, K., Nagase, M., and Makino, T., 1996b, Fabrication of 2-nm-wide silicon quantum wires through a combination of a partially-shifted resist pattern and orientation-dependent etching, Applied Physics, 70, 619-621.
    • (1996) Applied Physics , vol.70 , pp. 619-621
    • Namatsu, H.1    Kurihara, K.2    Nagase, M.3    Makino, T.4
  • 58
    • 0026986912 scopus 로고
    • Quantum wire fabrication by e-beam lithography using high-resolution and high-sensitivity e-beam resist ZEP-520
    • Nishida, T, Notomi, M., Iga, R., and Tamamura, T., 1992, Quantum wire fabrication by e-beam lithography using high-resolution and high-sensitivity e-beam resist ZEP-520. Japanese Journal of Applied Physics, 31, 4508-4514.
    • (1992) Japanese Journal of Applied Physics , vol.31 , pp. 4508-4514
    • Nishida, T.1    Notomi, M.2    Iga, R.3    Tamamura, T.4
  • 59
    • 0029252469 scopus 로고
    • Low-temperature drain current characteristics in sub-10-nm-thick SOI nMOSFET’ on SIMOX (Separation by implanted oxygen) substrate
    • Omura, Y, and Nagase, N., 1995, Low-temperature drain current characteristics in sub-10-nm-thick SOI nMOSFET’ on SIMOX (separation by implanted oxygen) substrate. Japanese Journal of Applied Physics, 34, 812-816.
    • (1995) Japanese Journal of Applied Physics , vol.34 , pp. 812-816
    • Omura, Y.1    Nagase, N.2
  • 60
    • 0000979605 scopus 로고
    • Coulomb blockade in silicon based structures at temperatures up to 50 K
    • Paul, D. J., Cleaver, J. R. A., Ahmed, H., and Whall, T E., 1993, Coulomb blockade in silicon based structures at temperatures up to 50 K. Applied Physics Letters, 63, 631-632.
    • (1993) Applied Physics Letters , vol.63 , pp. 631-632
    • Paul, D.J.1    Cleaver, J.R.A.2    Ahmed, H.3    Whall, T.E.4
  • 61
    • 44949283527 scopus 로고
    • Single electron pump fabricated with ultrasmall normal tunnel junctions
    • Pothier, H., Lafarge, P., Orfila, P. F., Urbina, C., Esteve, D., and Devoret, M. H., 1991, Single electron pump fabricated with ultrasmall normal tunnel junctions. Physica B, 169, 573-574.
    • (1991) Physica B , vol.169 , pp. 573-574
    • Pothier, H.1    Lafarge, P.2    Orfila, P.F.3    Urbina, C.4    Esteve, D.5    Devoret, M.H.6
  • 62
    • 35949025938 scopus 로고
    • Direct resistance switching in submicrometer silicon inversion layers: Individual interface traps and low-frequency (1/αβ) noise
    • Ralls, K. S., Skoopol, W J., Jaokel, L. D., Howard, R. E., Fetter, L. A., Epworth, R. W, and Tennant, D. M., 1984, Direct resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/αβ) noise. Physical Review Letters, 52, 228-231.
    • (1984) Physical Review Letters , vol.52 , pp. 228-231
    • Ralls, K.S.1    Skoopol, W.J.2    Jaokel, L.D.3    Howard, R.E.4    Fetter, L.A.5    Epworth, R.W.6    Tennant, D.M.7
  • 67
    • 0029254316 scopus 로고
    • Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate
    • Takahashi, Y., Furuta, T, Ono, Y., Ishiyama, T, and Tabe, M., 1995b, Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate. Japanese Journal of Applied Physics, 34, 950-954.
    • (1995) Japanese Journal of Applied Physics , vol.34 , pp. 950-954
    • Takahashi, Y.1    Furuta, T.2    Ono, Y.3    Ishiyama, T.4    Tabe, M.5
  • 71
    • 0006375912 scopus 로고
    • Analysis of a field-effect transistor with a channel made of ultrafine metal particles
    • Tamuha, H., and Hasuo, S., 1987, Analysis of a field-effect transistor with a channel made of ultrafine metal particles. Journal of Applied Physics, 62, 3036-3041
    • (1987) Journal of Applied Physics , vol.62 , pp. 3036-3041
    • Tamuha, H.1    Hasuo, S.2
  • 74
    • 0344181547 scopus 로고
    • Bistable saturation in coupled quantum-dot cells
    • Tougaw, P. D., Lent, C. S., and Porod, W., 1993, Bistable saturation in coupled quantum-dot cells. Journal of Applied Physics, 74, 3558-3566.
    • (1993) Journal of Applied Physics , vol.74 , pp. 3558-3566
    • Tougaw, P.D.1    Lent, C.S.2    Porod, W.3
  • 75
    • 21544465440 scopus 로고
    • Complementary digital logic based on the Coulomb blockade
    • Tucker, J. R., 1992, Complementary digital logic based on the Coulomb blockade. Journal of Applied Physics, 72, 4399-4413.
    • (1992) Journal of Applied Physics , vol.72 , pp. 4399-4413
    • Tucker, J.R.1
  • 76
    • 0001376187 scopus 로고
    • Coulomb-blockade oscillations in semiconductor nanostructures
    • H. Grabert, and M. H. Devoret, New York: Plenum
    • van Houten, H., Beenakkeh, C. W. J., and Staring, A. A. M., 1992, Coulomb-blockade oscillations in semiconductor nanostructures. In H. Grabert, and M. H. Devoret (Eds). Single Charging Tunneling (New York: Plenum), pp. 167-216.
    • (1992) Single Charging Tunneling , pp. 167-216
    • Van Houten, H.1    Beenakkeh, C.W.J.2    Staring, A.A.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.