Fabrication of one-dimensional silicon nanowire structures with a self-aligned point contact

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 9 B, 1996, Pages

  Namatsu, H ^a   Nagase, M ^a   Kurihara, K ^a   Horiguchi, S ^a   Makino, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; ELECTRIC CONTACTS; TECHNOLOGY; WIRE;

CRYSTALLOGRAPHIC ORIENTATION-DEPENDENT ETCHING; QUANTIZED CONDUCTANCE;

SEMICONDUCTING SILICON;

EID: 0030232368     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1148     Document Type: Article

References (9)