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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6668-6672

Sub-10-nm Si lines fabricated using shifted mask patterns controlled with electron beam lithography and KOH anisotropic etching

(4) Kurihara, Kenji a Namatsu, Hideo a Nagase, Masao a Makino, Takahiro a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

Anisotropic etching; ECR; Electron beam; KOH; Nanolithography; Plasma oxidation; Resist; Shifted mask pattern; Silicon

Indexed keywords

EID: 0042426735 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.6668 Document Type: Article

Times cited : (7)

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