Sub-10-nm Si lines fabricated using shifted mask patterns controlled with electron beam lithography and KOH anisotropic etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6668-6672

  Kurihara, Kenji ^a   Namatsu, Hideo ^a   Nagase, Masao ^a   Makino, Takahiro ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

Anisotropic etching; ECR; Electron beam; KOH; Nanolithography; Plasma oxidation; Resist; Shifted mask pattern; Silicon

Indexed keywords

EID: 0042426735     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6668     Document Type: Article

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