Room temperature operated single electron transistor fabricated by electron beam nanolithography

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 261-264

  Kurihara, K ^a   Namatsu, H ^a   Nagase, M ^a   Makino, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; NANOTECHNOLOGY; OXIDATION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSISTORS;

IMAGE REVERSAL TECHNIQUE; PLASMA OXIDATION; ROOM TEMPERATURE OPERATION; SINGLE ELECTRON TRANSISTOR;

ELECTRON BEAM LITHOGRAPHY;

EID: 0031073652     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00093-7     Document Type: Article

References (6)

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2. D. Ali and H. Ahmed, Appl. Phys. Lett. 64 (1994) 2119.
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6. H. Namatsu, M. Nagase, K. Kurihara, K, Iwadate and K. Murase, Microelectron. Eng. 27 (1995) 71.