Low frequency 1/f noise characterization of advanced CMOS-compatible bipolar junction transistors for technology evaluation

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 532-535

  Llinares, P ^a,b   Niel, S ^a   Laurens, M ^b   Ghibaudo, G ^c   Chroboczek, J A ^a  

^a ORANGE LABS   (France)

^b STMICROELECTRONICS   (Italy)

^c Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS;

1/F NOISE; BASE CURRENTS; CMOS COMPATIBLE; COMPARATIVE STUDIES; NOISE LEVELS; TECHNOLOGY EVALUATION;

BIPOLAR TRANSISTORS;

EID: 8744318756     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194483     Document Type: Conference Paper

References (8)

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6. P. Llinares, G. Ghibaudo, and J. A. Chroboczek, J. Appl. Phys., in press, (1997).
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8. L. Vendrame, T. Gravier, J. Kirtsch, A. Monroy, and A. Chantre, Microelectronics Reliability, 27, 1827 (1996).