Characterization of plasma charging damage in ultrathin gate oxides

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1998, Pages 312-317

  Lin, H C ^a   Wang, M F ^a   Chen, C C ^a   Hsien, S K ^a   Chien, C H ^a   Huang, T Y ^a   Chang, C Y ^a   Chao, T S ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; HIGH TEMPERATURE EFFECTS; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; THERMAL STRESS;

PLASMA ASHING TREATMENT;

GATES (TRANSISTOR);

EID: 0031674381     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1998.670662     Document Type: Conference Paper

References (23)