Temperature accelerated gate oxide degradation under plasma-induced charging

IEEE Electron Device Letters

Volumn 17, Issue 6, 1996, Pages 288-290

  Brozek, Tomasz ^b,c   Chan, Y David ^d,e   Viswanathan, Chand R ^a,b  

^a IEEE

^b Engineering IV   (United States)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d SEMATECH   (United States)

^e Rockwell International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS; MOSFET DEVICES; PLASMA ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR PLASMAS; VOLTAGE MEASUREMENT;

CHARGE TO BREAKDOWN CHARACTERISTICS; CURRENT VOLTAGE MEASUREMENT; HIGH CURRENT FLOW; OXIDE LEAKAGE MEASUREMENT; PLASMA INDUCED CHARGING; PLASMA PROCESSING;

OXIDES;

EID: 0030172381     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496460     Document Type: Article

References (12)

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