-
1
-
-
0028711776
-
-
41, pp. 2550-2559, Dec 94.
-
MR. Shaneyfelt, D.M. Fleetwood, J.R Schwank, T.L. Meisenheimer and P.S. Winokur, " Effects of Burn-in on Radiation Hardness" IEEE Trans, on Nucl. Sci. , NS-41, pp. 2550-2559, Dec 94.
-
Effects of Burn-in on Radiation Hardness" IEEE Trans, on Nucl. Sci. , NS
-
-
Shaneyfelt, M.R.1
Fleetwood, D.M.2
Schwank, J.R.3
Meisenheimer, T.L.4
Winokur, P.S.5
-
2
-
-
0029547147
-
-
42,pp 1607-1614, Dec 95.
-
S. D. Clark, ,J.P. Bings, M.C. Mäher, M.K. Williams, D.R. Alexander and R.L. Pease, " Plastic Packaging and Burn-in Effects on Ionizing Dose Response in CMOS Microcircuits", IEEE Trans, on Nucl. Sci. , NS-42,pp 1607-1614, Dec 95.
-
Plastic Packaging and Burn-in Effects on Ionizing Dose Response in CMOS Microcircuits IEEE Trans, on Nucl. Sci. , NS
-
-
Clark, S.D.1
Bings, J.P.2
Mäher, M.C.3
Williams, M.K.4
Alexander, D.R.5
Pease, R.L.6
-
3
-
-
0030173038
-
-
NS-43, pp 865-872, June 96.
-
M.R. Shaneyfelt, P.S. Winokur, D.M. Fleetwood, J.R Schwank and E.A. Reber, Jr, " Effects of Reliability Screens on MOS Charge Trapping", IEEE Trans, on Nucl. Sci. , NS-43, pp 865-872, June 96.
-
Effects of Reliability Screens on MOS Charge Trapping IEEE Trans, on Nucl. Sci.
-
-
Shaneyfelt, M.R.1
Winokur, P.S.2
Fleetwood, D.M.3
Schwank, J.R.4
Reber Jr., E.A.5
-
6
-
-
33747310137
-
-
42, pp 1650-1659, Dec 95
-
D.M. Fleetwood, S.L. Kosier, R.N. Nowlin, R.D. Schrimpf, R.A. Raber,Jr, M. Delaus, P.S Winokur, A. Wei, W.E. Combs and R.L. Pease, " Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates ", IEEE Trans. Nucl. Sei, NS-42, pp 1650-1659, Dec 95
-
Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates IEEE Trans. Nucl. Sei, NS
-
-
Fleetwood, D.M.1
Kosier, S.L.2
Nowlin, R.N.3
Schrimpf, R.D.4
Raber Jr., R.A.5
Delaus, M.6
Winokur, P.S.7
Wei, A.8
Combs, W.E.9
Pease, R.L.10
-
7
-
-
0029518477
-
-
42, pp 1541-1549, Dec 95
-
D.M. Schmidt, D.M. Fleetwood, R.D. Schrimpf, R.L. Pease, R.J. Graves, G.H. Johnsons, K.F. Galloway and W.E. Combs, " Comparison of Ionizing Radiation Induced Gain Degradation in Lateral Substrate and Vertical PNP BJTs", IEEE Trans. Nucl. Sei, NS-42, pp 1541-1549, Dec 95
-
Comparison of Ionizing Radiation Induced Gain Degradation in Lateral Substrate and Vertical PNP BJTs IEEE Trans. Nucl. Sei, NS
-
-
Schmidt, D.M.1
Fleetwood, D.M.2
Schrimpf, R.D.3
Pease, R.L.4
Graves, R.J.5
Johnsons, G.H.6
Galloway, K.F.7
Combs, W.E.8
-
8
-
-
0030373995
-
-
43, pp 3032-3039, Dec 96
-
D.M. Schmidt, A. Wu, R.D. Schrimpf, D.M. Fleetwood and R.L. Pease, " Modeling Ionizing Radiation Induced Gain Degradation of the Lateral PNP Bipolar Junction Transistor", IEEE Trans. Nucl. Sci. , NS-43, pp 3032-3039, Dec 96
-
Modeling Ionizing Radiation Induced Gain Degradation of the Lateral PNP Bipolar Junction Transistor IEEE Trans. Nucl. Sci. , NS
-
-
Schmidt, D.M.1
Wu, A.2
Schrimpf, R.D.3
Fleetwood, D.M.4
Pease, R.L.5
-
9
-
-
0029546529
-
-
42, pp 1641-1649, Dec 95
-
R.D. Schrimpf, R.J. Graves, D.M. Schmidt, D.M. Fleetwood, R.L. Pease, W.E. Combs, and M. Delaus "Hardness Assurance Issues for the Lateral PNP Bipolar Junction Transistors", IEEE Trans. Nucl. Sei, NS-42, pp 1641-1649, Dec 95
-
Hardness Assurance Issues for the Lateral PNP Bipolar Junction Transistors IEEE Trans. Nucl. Sei, NS
-
-
Schrimpf, R.D.1
Graves, R.J.2
Schmidt, D.M.3
Fleetwood, D.M.4
Pease, R.L.5
Combs, W.E.6
Delaus, M.7
-
10
-
-
0031355641
-
-
P.S.Winokur, D.M. Fleetwood, G.L. Hash J.R Schwank and F.W. Sexton 44, pp 2040-2047, Dec 97.
-
M.R. Shaneyfelt, P.S.Winokur, D.M. Fleetwood, G.L. Hash J.R Schwank and F.W. Sexton , " Impact of Aging on Radiation Hardness", IEEE Trans. Nucl. Sci. , NS-44, pp 2040-2047, Dec 97.
-
Impact of Aging on Radiation Hardness IEEE Trans. Nucl. Sci. , NS
-
-
Shaneyfelt, M.R.1
-
11
-
-
0028699527
-
-
41, pp 2427-2436, Dec 94
-
A.H. Johnston, G.M. Swift and B.J. Rax, " Total Dose Effects in Conventional Bipolar Transistors and Linear Integrated circuits", IEEE Trans. Nucl. Sci. , NS-41, pp 2427-2436, Dec 94
-
Total Dose Effects in Conventional Bipolar Transistors and Linear Integrated Circuits IEEE Trans. Nucl. Sci. , NS
-
-
Johnston, A.H.1
Swift, G.M.2
Rax, B.J.3
-
12
-
-
0029521843
-
-
42, pp 1650-1659, Dec 95
-
A.H. Johnston, B.J. Rax, and C.I. Lee, " Enhanced Damage in Linear Integrated circuits at Low Dose Rate", IEEE Trans. Nucl. Sci. , NS-42, pp 1650-1659, Dec 95
-
Enhanced Damage in Linear Integrated Circuits at Low Dose Rate IEEE Trans. Nucl. Sci. , NS
-
-
Johnston, A.H.1
Rax, B.J.2
Lee, C.I.3
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