3-D single-electron-memory cell structure with 2F2 per bit

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 924-926

  Ishii, Tomoyuki ^a   Yano, Kazuo ^a   Sano, Toshiaki ^a   Mine, Toshiyuki ^a   Murai, Fumio ^a   Kure, Tokuo ^a   Seki, Koichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SINGLE ELECTRON MEMORY CELLS; VERTICALLY UNITED CELL (VUC) STRUCTURE;

ELECTRON BEAM LITHOGRAPHY; ETCHING; LSI CIRCUITS; MOS DEVICES; OXIDATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; ULTRATHIN FILMS;

SEMICONDUCTOR STORAGE;

EID: 84886448066     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)