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Volumn 34, Issue 2, 1998, Pages 191-203

GaN-based Blue Laser Diodes Grown on SiC Substrate as Light Source of High-density Optical Data Storage

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETOOPTICAL DEVICES; OPTICAL DISK STORAGE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES;

EID: 0032298871     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (10)

References (16)
  • 9
    • 0031223360 scopus 로고    scopus 로고
    • InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
    • A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota, and T. Tanahashi: InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy. Jpn. J. Appl. Phys., 36, pp. L1130-L1132 (1997).
    • (1997) Jpn. J. Appl. Phys. , vol.36
    • Kuramata, A.1    Domen, K.2    Soejima, R.3    Horino, K.4    Kubota, S.5    Tanahashi, T.6
  • 14
    • 0030709145 scopus 로고    scopus 로고
    • Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE
    • K. Horino, A. Kuramata, and T. Tanahashi: Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE. Mat. Res. Soc. Symp. Proc., 449, pp. 73-78 (1997).
    • (1997) Mat. Res. Soc. Symp. Proc. , vol.449 , pp. 73-78
    • Horino, K.1    Kuramata, A.2    Tanahashi, T.3
  • 15
    • 0032090904 scopus 로고    scopus 로고
    • InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy
    • A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota, and T. Tanahashi: InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy. J. Cryst. Growth, 189/190, pp. 826-830 (1998).
    • (1998) J. Cryst. Growth , vol.189-190 , pp. 826-830
    • Kuramata, A.1    Domen, K.2    Soejima, R.3    Horino, K.4    Kubota, S.5    Tanahashi, T.6
  • 16
    • 0000420793 scopus 로고    scopus 로고
    • Interwell inhomogeneity of carrier injection in InGaN/GaN/ AlGaN multiquantum well lasers
    • K. Domen, R. Soejima, A. Kuramata, K. Horino, S. Kubota, and T. Tanahashi: Interwell inhomogeneity of carrier injection in InGaN/GaN/ AlGaN multiquantum well lasers. Appl. Phys. Lett., 73, pp. 2775-2777 (1998).
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 2775-2777
    • Domen, K.1    Soejima, R.2    Kuramata, A.3    Horino, K.4    Kubota, S.5    Tanahashi, T.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.