-
1
-
-
0029779805
-
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
-
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto: InGaN-Based Multi-Quantum-Well-Structure Laser Diodes. Jpn. J. Appl. Phys., 35, pp. L74-L76 (1996).
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamada, T.5
Matsushita, T.6
Kiyoku, H.7
Sugimoto, Y.8
-
2
-
-
0030572215
-
Shortest wavelength semiconductor laser diode
-
I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, and H. Amano: Shortest wavelength semiconductor laser diode. Electron. Lett., 32, pp. 1105-1106 (1996).
-
(1996)
Electron. Lett.
, vol.32
, pp. 1105-1106
-
-
Akasaki, I.1
Sota, S.2
Sakai, H.3
Tanaka, T.4
Koike, M.5
Amano, H.6
-
3
-
-
0030264202
-
Room temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
-
K. Itaya, M. Onomura, J. Nishio, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi, and M. Ishikawa: Room temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates. Jpn. J. Appl. Phys., 35, pp. L1315-L1317 (1996).
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
-
-
Itaya, K.1
Onomura, M.2
Nishio, J.3
Sugiura, L.4
Saito, S.5
Suzuki, M.6
Rennie, J.7
Nunoue, S.8
Yamamoto, M.9
Fujimoto, H.10
Kokubun, Y.11
Ohba, Y.12
Hatakoshi, G.13
Ishikawa, M.14
-
4
-
-
4043086293
-
Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
-
article 41
-
M.P. Mack, A. Abare, M. Aizcorbe, P. Kozodoy, S. Keller, U. K. Mishra, L. Coldren, and S. DenBaars: Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD. Internet J. Nitride Semicond. Res., 2, article 41 (1997).
-
(1997)
Internet J. Nitride Semicond. Res.
, vol.2
-
-
Mack, M.P.1
Abare, A.2
Aizcorbe, M.3
Kozodoy, P.4
Keller, S.5
Mishra, U.K.6
Coldren, L.7
DenBaars, S.8
-
5
-
-
0000847378
-
Room Temperature Pulsed Operation of a GaInN Multiple-Quantum-Well Laser Diode with an Optimized Well Number
-
F. Nakamura, T. Kobayashi, T. Asatsuma, K. Funato, K. Yanashima, S. Hashimoto, K. Naganuma, S. Tomioka, T. Miyajima, E. Morita, H. Kawai, and M. Ikeda: Room Temperature Pulsed Operation of a GaInN Multiple-Quantum-Well Laser Diode with an Optimized Well Number. Proceedings of The Second International Conference on Nitride Semiconductors, p. 460 (1997).
-
(1997)
Proceedings of the Second International Conference on Nitride Semiconductors
, pp. 460
-
-
Nakamura, F.1
Kobayashi, T.2
Asatsuma, T.3
Funato, K.4
Yanashima, K.5
Hashimoto, S.6
Naganuma, K.7
Tomioka, S.8
Miyajima, T.9
Morita, E.10
Kawai, H.11
Ikeda, M.12
-
6
-
-
0032023478
-
Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching
-
M. Kneissl, D. P. Bour, N. M. Johnson, L. T. Romano, B. S. Krusor, R. Donaldson, J. Walker, and C. Dunnrowicz: Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching. Appl. Phys. Lett., 72, pp. 1539-1541 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 1539-1541
-
-
Kneissl, M.1
Bour, D.P.2
Johnson, N.M.3
Romano, L.T.4
Krusor, B.S.5
Donaldson, R.6
Walker, J.7
Dunnrowicz, C.8
-
7
-
-
1542594972
-
Room Temperature Pulsed Operation of Nitride-Based Ridge-Waveguide Laser Diodes with Cleaved Facets
-
PD1.2
-
N. Yamada, Y. Kaneko, S. Watanabe, Y. Yamaoka, T. Hidaka, S. Nakagawa, E. Marenger, T. Takeuchi, S. Yamaguchi, H. Amano, and I. Akasaki: Room Temperature Pulsed Operation of Nitride-Based Ridge-Waveguide Laser Diodes with Cleaved Facets. Proceedings of IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, PD1.2 (1997).
-
(1997)
Proceedings of IEEE Lasers and Electro-Optics Society 1997 Annual Meeting
-
-
Yamada, N.1
Kaneko, Y.2
Watanabe, S.3
Yamaoka, Y.4
Hidaka, T.5
Nakagawa, S.6
Marenger, E.7
Takeuchi, T.8
Yamaguchi, S.9
Amano, H.10
Akasaki, I.11
-
8
-
-
0031209878
-
Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
-
G. E. Bulman, K. Doverspike, S. T. Sheppard, T. W. Weeks, H. S. Kong, H. M. Dieringer, J. A. Edmond, J. D. Brown, J. T. Swindell, and J. F. Schetzina: Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC. Electron. Lett., 33, pp. 556-557 (1997).
-
(1997)
Electron. Lett.
, vol.33
, pp. 556-557
-
-
Bulman, G.E.1
Doverspike, K.2
Sheppard, S.T.3
Weeks, T.W.4
Kong, H.S.5
Dieringer, H.M.6
Edmond, J.A.7
Brown, J.D.8
Swindell, J.T.9
Schetzina, J.F.10
-
9
-
-
0031223360
-
InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
-
A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota, and T. Tanahashi: InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy. Jpn. J. Appl. Phys., 36, pp. L1130-L1132 (1997).
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
-
-
Kuramata, A.1
Domen, K.2
Soejima, R.3
Horino, K.4
Kubota, S.5
Tanahashi, T.6
-
10
-
-
0042625682
-
Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
-
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku: Room Temperature CW Operation of InGaN MQW Structure Laser Diodes. Appl. Phys. Lett., 69, pp. 4056-4058 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 4056-4058
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamada, T.5
Matsushita, T.6
Sugimoto, Y.7
Kiyoku, H.8
-
11
-
-
0002129719
-
Nitride-based Emitters on SiC substrates
-
J. Edmond, G. Bulman, H.S. Kong, M. Leonard, K. Doverspike, W. Weeks, J. Niccum, S. Sheppard, G. Negley, and D. Slater: Nitride-based Emitters on SiC substrates. Proceedings of The Second International Conference on Nitride Semiconductors, pp. 448-449 (1997).
-
(1997)
Proceedings of the Second International Conference on Nitride Semiconductors
, pp. 448-449
-
-
Edmond, J.1
Bulman, G.2
Kong, H.S.3
Leonard, M.4
Doverspike, K.5
Weeks, W.6
Niccum, J.7
Sheppard, S.8
Negley, G.9
Slater, D.10
-
12
-
-
0032025340
-
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
-
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho: High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates. Jpn. J. Appl. Phys., 37, pp. L309-L311 (1998).
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamada, T.5
Matsushita, T.6
Kiyoku, H.7
Sugimoto, Y.8
Kozaki, T.9
Umemoto, H.10
Sano, M.11
Chocho, K.12
-
13
-
-
1542594969
-
MOVPE Growth of GaN on Various Cleavable Substrates
-
A. Kuramata, K. Horino, K. Domen, R. Soejima, H. Sudo, and T. Tanahashi: MOVPE Growth of GaN on Various Cleavable Substrates. Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes, pp. 80-85 (1996).
-
(1996)
Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes
, pp. 80-85
-
-
Kuramata, A.1
Horino, K.2
Domen, K.3
Soejima, R.4
Sudo, H.5
Tanahashi, T.6
-
14
-
-
0030709145
-
Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE
-
K. Horino, A. Kuramata, and T. Tanahashi: Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE. Mat. Res. Soc. Symp. Proc., 449, pp. 73-78 (1997).
-
(1997)
Mat. Res. Soc. Symp. Proc.
, vol.449
, pp. 73-78
-
-
Horino, K.1
Kuramata, A.2
Tanahashi, T.3
-
15
-
-
0032090904
-
InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy
-
A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota, and T. Tanahashi: InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy. J. Cryst. Growth, 189/190, pp. 826-830 (1998).
-
(1998)
J. Cryst. Growth
, vol.189-190
, pp. 826-830
-
-
Kuramata, A.1
Domen, K.2
Soejima, R.3
Horino, K.4
Kubota, S.5
Tanahashi, T.6
-
16
-
-
0000420793
-
Interwell inhomogeneity of carrier injection in InGaN/GaN/ AlGaN multiquantum well lasers
-
K. Domen, R. Soejima, A. Kuramata, K. Horino, S. Kubota, and T. Tanahashi: Interwell inhomogeneity of carrier injection in InGaN/GaN/ AlGaN multiquantum well lasers. Appl. Phys. Lett., 73, pp. 2775-2777 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2775-2777
-
-
Domen, K.1
Soejima, R.2
Kuramata, A.3
Horino, K.4
Kubota, S.5
Tanahashi, T.6
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