Gate current model for the hot-electron regime of operation in heterostructure field effect transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 10, 1998, Pages 2108-2115

  Martinez, Edgar J ^a   Shur, Michael S ^a   Schuermeyer, Fritz L ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CHARGE INJECTION TRANSISTORS (CHINT); HETEROSTRUCTURE FIELD EFFECT TRANSISTOR (HFET);

GATES (TRANSISTOR);

EID: 0032186896     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725243     Document Type: Article

References (19)

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