Gate currents in heterostructure field-effect transistors: contribution by "warm" electrons

Materials Science and Engineering B

Volumn 28, Issue 1-3, 1994, Pages 264-267

  Schuermeyer, Fritz ^a   Shur, Michael ^b   Martinez, Edgar ^a,b   Cerny, Charles ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

Author keywords

Heterostructures; Hot carriers; Indium phosphide; Real space transfer

Indexed keywords

CRYSTAL LATTICES; ELECTRIC CURRENTS; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; HEATING; HETEROJUNCTIONS; HOT CARRIERS; PROBABILITY; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

DRAIN BIAS; DRAIN POTENTIAL; GATE BIAS; GATE CURRENT; GATE TO CHANNEL BARRIER; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; REAL SPACE TRANSFER; TWO DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 0028714117     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(94)90061-2     Document Type: Article

References (6)

1. 50th Ann. Device Research Conf.