Current-Voltage and Capacitance-Voltage Characteristics of Heterostructure Insulated-Gate Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 34, Issue 8, 1987, Pages 1650-1657

  Baek, Junho ^a   Shur, Michael S ^b   Daniels, Robert R ^b   Arch, David K ^b   Abrokwah, Jonathon K ^b   Tufte, Obert N ^b  

^a UNIVERSITY OF MINNESOTA   (United States)

^b HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS;

CHARGE-CONTROL MODEL; HETEROINTERFACE; HIGFET; INSULATED-GATE FIELD-EFFECT TRANSISTORS; TWO-DIMENSIONAL GASES;

TRANSISTORS, FIELD EFFECT;

EID: 0023399415     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23133     Document Type: Article

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