Experimental and Theoretical Investigation of the DC and High-Frequency Characteristics of the Negative Differential Resistance in Pseudomorphic AlGaAs/InGaAs/GaAs MODFET's

IEEE Transactions on Electron Devices

Volumn 39, Issue 2, 1992, Pages 257-263

  Kolodzey, James ^a   Leburton, Jean Pierre ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM GALLIUM ARSEINDE; INDIUM GALLIUM ARSENIDE; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFETS); PSEUDOMORPHIC MODFETS; TUNNELING REAL SPACE TRANSFER;

TRANSISTORS, FIELD EFFECT;

EID: 0026820124     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.121681     Document Type: Article

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