Heterostructure Insulated Gate Field Effect Transistors Operated in Hot Electron Regime

IEEE Transactions on Electron Devices

Volumn 41, Issue 5, 1994, Pages 854-856

  Schuermeyer, F ^b  

^a UNIVERSITY OF VIRGINIA   (United States)

^b WRIGHT PATTERSON AIR FORCE BASE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSITIONS; ELECTRONS; FABRICATION; HETEROJUNCTIONS; HOT CARRIERS; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CHARGE INJECTION TRANSISTOR; CONDUCTION BAND DISCONTINUITY; DRAIN TO SOURCE VOLTAGE; ELECTRON ENERGY; HETEROSTRUCTURE INSULATED GATE FIELD EFFECT TRANSISTOR; REAL SPACE ELECTRON TRANSFER; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0028426732     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.285045     Document Type: Article

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