New Negative Resistance Regime of Heterostructure Insulated Gate Transistor (HIGFET) Operation

IEEE Electron Device Letters

Volumn 7, Issue 2, 1986, Pages 78-80

  Arch, D K ^b   Daniels, R R ^b   Abrokwah, Jonathan K ^b  

^a UNIVERSITY OF MINNESOTA   (United States)

^b HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY - ANALYSIS;

HETEROSTRUCTURE INSULATED GATE FET; NEGATIVE DIFFERENTIAL RESISTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0022668993     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26300     Document Type: Article

References (8)

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