SCOPUS 정보 검색 플랫폼

Volumn 30, Issue 6 R, 1991, Pages 1190-1193

High-frequency characteristics of charge-injection transistor-mode operation in algaas/ingaas/gaas metal-insulator-semiconductor field-effect transistors

(2) Maezawa, Koichi a Mizutani, Takashi a

a NTT CORPORATION (Japan)

Author keywords

Aluminum gallium arsenide; Charge injection transistor; Cutoff frequency; Equivalent circuit analysis; Gallium arsenide; Hot electron; Indium gallium arsenide; Misfet; Real space transfer; S parameter

Indexed keywords

ELECTRIC MEASUREMENTS - FREQUENCY; SEMICONDUCTOR MATERIALS - HOT CARRIERS; SOLID STATE DEVICES - METAL/INSULATOR BOUNDARIES; TRANSISTORS, FIELD EFFECT - GATES;

CHARGE INJECTION TRANSISTORS (CHINTS); HIGH-SPEED CIRCUIT INTEGRATION; NEGATIVE DIFFERENTIAL RESISTANCE (NDR);

SEMICONDUCTOR DEVICES, MISFET;

EID: 0026171055 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.30.1190 Document Type: Article

Times cited : (12)

References (12)

1
- 0024750458
- M. Hirano, S. Fujita, K. Maezawa and T. Mizutani: IEEE Trans. Electron Devices ED-36 (1989) 2217.
- (1989) IEEE Trans. Electron Devices , vol.ED-36 , pp. 2217
- Hirano, M.¹ Fujita, S.² Maezawa, K.³ Mizutani, T.⁴

2
- 0022668993
- M. Shur, D. K. Arch, R. R. Daniels and J. K. Abrokwah: IEEE Electron Device Lett. EDL-7 (1986) 78.
- (1986) IEEE Electron Device Lett , vol.EDL-7 , pp. 78
- Shur, M.¹ Arch, D.K.² Daniels, R.R.³ Abrokwah, J.K.⁴

3
- 0038909836
- Springer-Verlag, Berlin
- D. J. Frank, P. M. Solomon, D. C. Latulipe, Jr., H. Baratte, C. M. Knoedler and S. L. Wright: High Speed Electronics, eds. B. Källbäck and M. Beneking (Springer-Verlag, Berlin, 1986) p. 140.
- (1986) High Speed Electronics, Eds. B. Källbäck and M. Beneking , pp. 140
- Frank, D.J.¹ Solomon, P.M.² Latulipe, D.C.³ Baratte, H.⁴ Knoedler, C.M.⁵ Wright, S.L.⁶

4
- 0025384592
- E. Delhaye, T. Aguila, M. Wolny and P. Boissenot: Jpn. J. Appl. Phys. 29 (1990) 236.
- (1990) Jpn. J. Appl. Phys , vol.29 , pp. 236
- Delhaye, E.¹ Aguila, T.² Wolny, M.³ Boissenot, P.⁴

5
- 84944997430
- IOP Publishing, New York
- F. Danneville, P. Godts, J. Zimmerman and E. Constant: Proc. 17th Int. Symp. GaAs and Related Compounds, Jersey, 1990, Inst. Phys. Conf. Ser. No. 112, (IOP Publishing, New York, 1991) p. 483.
- (1991) Proc. 17Th Int. Symp. Gaas and Related Compounds, Jersey, 1990, Inst. Phys. Conf. Ser. No. , vol.112 , pp. 483
- Danneville, F.¹ Godts, P.² Zimmerman, J.³ Constant, E.⁴

6
- 0020812843
- A. Kastalsky and S. Luryi: IEEE Electron Device Lett. EDL-4 (1983) 334.
- (1983) IEEE Electron Device Lett , vol.EDL-4 , pp. 334
- Kastalsky, A.¹ Luryi, S.²

7
- 0021437220
- S. Luryi, A. Kastalsky, A. C. Gossard and R. Hendel: IEEE Trans. Electron Devices ED-31 (1984) 832.
- (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 832
- Luryi, S.¹ Kastalsky, A.² Gossard, A.C.³ Hendel, R.⁴

8
- 0023042991
- A. Kastalsky, J. H. Abeles, R. Bhat, W. K. Chan and M. A. Koza: Appl. Phys. Lett. 48 (1986) 71.
- (1986) Appl. Phys. Lett , vol.48 , pp. 71
- Kastalsky, A.¹ Abeles, J.H.² Bhatchan, R.³ Bhatchan, W.K.⁴ Koza, M.A.⁵

9
- 36549100306
- M. R. Hueschen, N. Moll and A. Fischer-Colbrie: Appl. Phys. Lett. 57 (1990) 386.
- (1990) Appl. Phys. Lett , vol.57 , pp. 386
- Hueschen, M.R.¹ Moll, N.² Fischer-Colbrie, A.³

10
- 0042293737
- I. C. Kizilyalli and K. Hess: J. Appl. Phys. 65 (1989) 2005.
- (1989) J. Appl. Phys , vol.65 , pp. 2005
- Kizilyalli, I.C.¹ Hess, K.²

11
- 0023266814
- K. Maezawa, H. Ito and T. Mizutani: Jpn. J. Appl. Phys. 26 (1987) L74.
- (1987) Jpn. J. Appl. Phys , vol.26
- Maezawa, K.¹ Ito, H.² Mizutani, T.³

12
- 0020161050
- R. F. Kazarinov and S. Luryi: Appl. Phys. A 28 (1982) 151.
- (1982) Appl. Phys. A , vol.28 , pp. 151
- Kazarinov, R.F.¹ Luryi, S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.