A quantum gate current model

IEEE Transactions on Electron Devices

Volumn 40, Issue 5, 1993, Pages 1022-1024

  Abbott, E B ^a   Lee, M ^a   Sweeny, M ^a   Xu, J M ^a   Mand, R S ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b Furukawa Electronic Technology Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; HETEROJUNCTIONS; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE;

CHARGE-CONTROL ANALYSIS; FERMI LEVEL BENDING; HETEROSTRUCTURE FET; QUANTUM GATE CURRENT MODEL; SISFET; THERMIONIC EMISSION GATE CURRENTS; TUNNELING CURRENT; WKB APPROXIMATION;

FIELD EFFECT TRANSISTORS;

EID: 0027594262     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.210215     Document Type: Article

References (7)

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