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Journal of Applied Physics
Volumn 53, Issue 10, 1982, Pages
Semiconducting and other major properties of gallium arsenide
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Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - PHYSICAL PROPERTIES;
EID: 0020193772     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.331665     Document Type: Article
Times cited : (2169)
References (434)
  • 9
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    • (Institute of Physics, London). Volumes in Inst. of Physics Conference Series: relevant volumes are No., No., No., No., No., Nos. 33a and 33b (1977), No., and No..
    • (1967) Gallium Arsenide and Related Compounds , vol.3
  • 37
    • 84952267549 scopus 로고    scopus 로고
    • Phillips (Ref. 35) used the symbol [formula omitted] to denote the ionicity fraction of a mixed bond. For the sphalerite III‐V binary compounds, he reported values for [formula omitted] ranging from a low of 0.25 for AlSb to a high of 0.42 for InP.
  • 38
    • 84952267532 scopus 로고    scopus 로고
    • This asymmetry comes about since the GaAs primitive basis consists of two chemically different atoms. Thus the lattice does not have inversion symmetry.
  • 50
  • 53
    • 84952267537 scopus 로고    scopus 로고
    • The electric field generated by a sound wave in piezoelectric GaAs that was also semi‐insulating would affect the wave speed. Thus speed of sound measurements to determine the second‐order moduli must use conducting GaAs—preferably lightly doped. That was the case for the work of Refs. 43-46 and 48. See Drabble (Ref. 47) for a discussion of the more complicated set of small‐stress elastic parameters when piezoelectric coupling is significant.
  • 98
    • 0014557608 scopus 로고
    • Effects first explained by, in terms of elastic moduli anisotropy. That explanation was not, at that time, for GaAs itself, but for solids such as germanium with a similar value for the ratio [formula omitted]
    • (1969) Phys. Rev. Lett , vol.23 , pp. 416
    • Taylor, B.1    Maris, H.J.2    Elbaum, C.3
  • 111
  • 123
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    • Carlson et al. (Ref. 105) had used single‐crystal samples with transverse dimensions [formula omitted] Thus Casimir (boundary) scattering at a sample’s side faces would limit [formula omitted] to no more than [formula omitted] The upper limit in Fig. 19 suggests that there might also have been some defect/impurity scattering; but clearly not much, if any, for this purest sample.
  • 127
    • 84952267564 scopus 로고
    • See Vol. of Ref. 10. This contains ten chapters (contributed among 17 authors) on various optical properties.
    • (1967) , vol.10
  • 138
    • 84952267565 scopus 로고
    • See Vol. of Ref. 10. This volume comprises six chapters on various aspects of optical modulation spectroscopy, with data for GaAs among other semiconductors. These chapters concern: electroreflectance (B. O. Seraphin, p. 1), interband magnetooptics (R. L. Aggarwal, p. 151), electroabsorption (D. F. Blossey and P. Handler, p. 257), temperature and wavelength modulation (B. Batz, p. 315), piezo‐optical effects (I. Balslev, p. 403), and the theory underlying electric field modulation phenomena (D. E. Aspnes and N. Bottka, p. 457).
    • (1972) , vol.9
  • 150
    • 84952293615 scopus 로고    scopus 로고
    • See also Seraphin on p. of Ref. 134.
    • et seq. , pp. 1
  • 164
    • 84952267566 scopus 로고    scopus 로고
    • Seraphin (in Ref. 134) attempted an ordering of GaAs bands from electroreflectance data, as also so did Pond and Handler (Ref. 148). Aspnes (Ref. 152) developed a comprehensive ordering scheme, based in part on Schottky barrier electroreflectance spectra (Ref. 151) involving transitions from Ga [formula omitted] core levels [formula omitted] using synchrotron radiation). These spectra had shown the [formula omitted] band to be lower than the [formula omitted] band among GaAs conduction bands. The band ordering scheme of Ref. 152 also took into account published data from other types of experiment, including photoemission.
  • 167
    • 84952267571 scopus 로고
    • For a review of interband magneto‐optics from the MIT group that pioneered so many of these experiments, see B. Lax and J. G. Mavroides, in Ref. 10, Vol., p. 321. Later in that same volume (p. 421), E. D. Palik and G. B. Wright reviewed free carrier magnetoptic effects.
    • (1967) , vol.3
  • 168
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    • For a further overview of interband magneto‐optics, including GaAs, see R. L. Aggarwal, in Ref. 10, vol. 9,.
    • (1972) , pp. 151
  • 172
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    • See also Piller in Ref. 10, Vol. 8,.
    • (1972) , pp. 103
  • 181
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    • in Ref. 10, Vol. 10,.
    • (1975) , pp. 1
    • Rode, D.L.1
  • 189
    • 84952267555 scopus 로고    scopus 로고
    • Things can get much more complicated for heavy P ‐type doping of GaAs, when [formula omitted] for one, or both, of the uppermost valence bands. D. Olego, H. R. Chandrasekhar, and M. Cardona, on p. of Ref. 128, report that holes in GaAs have a damping coefficient some 10 times larger than [formula omitted] for conduction electrons.
  • 214
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    • in Ref. 10, Vol. 3,.
    • (1967) , pp. 405
    • Fan, H.Y.1
  • 221
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    • Stanford Univ. Report SEL‐67‐ (unpublished).
    • (1967) , vol.38
    • Eden, R.C.1
  • 224
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    • See also Phillip and Ehrenreich on p. of Ref. 10, Vol.
    • (1967) , vol.3 , pp. 93
  • 225
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    • Thesis, Harvard Univ. (unpublished).
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    • DeMeis, W.M.1
  • 229
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    • J. Phys. Chem. Solids
    • Kane described the model here specifically for the bands of InSb. That approach is equally valuable for other direct gap III‐V compounds such as GaAs, when due account is made for the differences in the ratio of gap width [formula omitted] to spinorbit splitting energy [formula omitted] among the various compounds.
    • (1957) k.p , vol.1 , pp. 249
    • Kane, E.O.1
  • 231
    • 84952297312 scopus 로고
    • Two major accounts of the implications of the Elliott model (Ref. 216) for optical absorption, including excitonic (electron/hole coulombic attraction) effects, are: T. P. McLean, in Ref. 8, Vol., p. 53; and J. O. Dimmock, in Ref. 10, Vol. 3 1960 5 259,.
    • (1960) , vol.5 , pp. 259
  • 233
    • 84952272895 scopus 로고    scopus 로고
    • The electron and hole of an exciton are bound to each other; thus why speak of a free exciton? For a Frenkel exciton, the radius of the mutually bound entity is comparable with an interatomic spacing. The orbital radius is much larger for a weakly bound Wannier exciton, as appropriate for GaAs with its large dielectric constant and small [formula omitted] Each type is referred to as being if it is not prevented from moving bodily through space, through having become trapped at an impurity or defect site.
    • free
  • 244
    • 84952267480 scopus 로고    scopus 로고
    • As shown by Sturge’s data (Ref. 222) in the curves of Fig. 36, the edge does become steeper on cooling, at least the upper part does. The region for [formula omitted] is not noticeably steepened for cryogenic temperatures. However, this is the part of the edge for which it is hardest to separate the intrinsic and extrinsic parts of the total optical density.
  • 258
    • 84952267479 scopus 로고    scopus 로고
    • The Kramers‐Kronig analysis procedure (Ref. 209) uses an integral involving the reflectance R, taken from [formula omitted] to [formula omitted] obviously not possible in practice. Philipp and Ehrenreich (Ref. 210) pointed out that extrapolation to zero frequency is straightforward in terms of the infrared refractive index. Extrapolation to infinite frequency can be done reasonably reliably if data concerning R is available to the point at which [formula omitted] and continues to fall. For their [formula omitted] R was less than 0.01, and falling steadily.
  • 274
    • 84952267486 scopus 로고    scopus 로고
    • The heavy and light hole combination has [formula omitted] in GaAs, compared with almost [formula omitted] in Ge. The GaAs conduction electrons appear superficially more mobile than in Ge, but only because different minima are involved. For the L minima (lowest in Ge, and second‐lowest in GaAs), [formula omitted] in Ge; some four times larger than the estimate of Aspnes (Ref. 152) for [formula omitted] in GaAs, and larger than likely by extrapolation of the [formula omitted] curves in Fig. 65.
  • 316
    • 84952267483 scopus 로고    scopus 로고
    • Some doubts as to the authority of [formula omitted] ordering were, however, expressed by Fawcett et al. (Ref. 293).
  • 329
    • 84952267489 scopus 로고    scopus 로고
    • Figure 45 is drawn to be deliberately ambiguous as to whether the lowest conduction band of (100) symmetry should be described as [formula omitted] (with extrema actually on the zone boundary, and only three ellipsoids), or as [formula omitted] (extremal location a little inside the zone, and six ellipsoidal surfaces for any slightly higher energy). Pitt and Lees (Ref. 305) concluded the former, and Aspnes (Ref. 152) seems to have gone along with [formula omitted] status also. Since then, Pinczuk et al. (Ref. 128) reported Raman measurements which support the placement of six extremal locations 10% inside the zone boundary. The curve of Chelikowsky and Cohen (Ref. 264), as reported in Fig. 43, is almost flat for some distance in from the zone boundary, consistent with either [formula omitted] or [formula omitted] symmetry. Thus the indirect optical gap from the valence maximum to thse conduction states will be very nearly the same for [formula omitted] in the range [formula omitted]
  • 341
    • 0004093089 scopus 로고    scopus 로고
    • The Ge and Si data were reviewed by J. S. Blakemore, (Dover, New York, 1983), Sec. 1.5 (in press).
    • Semiconductor Statistics
  • 347
    • 84952267491 scopus 로고    scopus 로고
    • Eight vectors of [111] symmetry can be drawn radiating from the zone center. For four of these, a linear k term will act to raise the energy, and this set of four has tetrahedral symmetry. The other set of four directions allows energy to fall more speedily from the start.
  • 349
    • 84952267490 scopus 로고    scopus 로고
    • Skolnick et al. (Ref. 320) reviewed data that could indicate mini‐maxima in GaAs, GaSb, and InSb, and ended up by treating this as negligible for GaAs.
  • 352
  • 357
    • 84952267487 scopus 로고    scopus 로고
    • The secular equation was actually expressed as a quartic by Kane (Ref. 215), with four roots. The additional root was for the VI heavy‐hole band. However, the latter root is of lesser value, for it dictated a bandedge mass of [formula omitted] itself, twice as large as the experimentally observed value.
  • 379
    • 35949033474 scopus 로고
    • Optical transitions from the splitoff band to upper valence bands in P ‐type GaAs were noted in connection with the work of Braunstein (Ref. 350). The threshold for transitions to the conduction band was noted in the work of Vrehen (Ref. 165), Sturge (Ref. 222), Sell and Casey (Ref. 243; see Fig. 37), and Sell et al. (Ref. 299). This threshold can also be seen for transitions in the photoionization of acceptor impurities: see
    • (1973) Phys. Rev. B , vol.8 , pp. 5664
    • Brown, W.J.1    Woodbury, D.A.2    Blakemore, J.S.3
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  • 385
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    • It is reasonable to suppose that the various data points in Fig. 56 were acquired using a magnetic induction in the 1-5 kG range. Thus the Hall mobility [formula omitted] values so obtained would tend to fall below the “zero‐field” values by a few percent—to an extent that would not be the same for the seven investigations summarized in the figure. Moreover, the values of [formula omitted] assigned against the abscissa scale would almost certainly have been in, in practice, values of [formula omitted] Some of these could easily be 20% lower than the true [formula omitted] That is relatively unimportant compared with the six decades spanned by the abscissa of Fig. 56, but could be nontrivial in some cases.
  • 386
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    • See, for a recent comprehensive review of the principles of ionized impurity scattering, including the Conwell‐Weisskopf, and the Dingle‐Brooks‐Herring approaches.
    • (1981) Rev. Mod. Phys , vol.53 , pp. 745
    • Chattopadhyay, D.1    Queisser, H.J.2
  • 423
    • 84952267497 scopus 로고
    • in Ref. 10, Vol. 4,.
    • (1968) , pp. 459
    • Bate, R.T.1

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