A new extraction method to determine bias-dependent source series resistance in GaAs FET's

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 9, 1998, Pages 1242-1250

  Kim, Chung Hwan ^a   Yoon, Kyung Sik ^a   Yang, Jeon Wook ^a   Lee, Jin Hee ^b   Park, Chul Soon ^b   Lee, Jae Jin ^b   Pyun, Kwang Eui ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea University   (South Korea)

Author keywords

Bias dependence; Cold FET; Source resistance

Indexed keywords

CALCULATIONS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE;

BIAS DEPENDENT SOURCE RESISTANCES; DRAIN RESISTANCES; GATE PROBE MEASUREMENT; PARASITIC RESISTANCES;

FIELD EFFECT TRANSISTORS;

EID: 0032166770     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.709464     Document Type: Article

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