A new and reliable direct parasitic extraction method for MESFETs and HEMTs

1993 23rd European Microwave Conference, EuMA 1993

Volumn , Issue , 1993, Pages 451-453

  Tayrani, Reza ^a   Gerber, Jason E ^a   Daniel, Tom ^a   Pengelly, Rayrnond S ^a   Rohde, Ulrich L ^a  

^a Inc Paterson ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; EXTRACTION; MESFET DEVICES; SCATTERING PARAMETERS;

DIRECT EXTRACTION; PARASITIC CAPACITANCE; PARASITIC ELEMENT; PARASITIC EXTRACTION; RESISTANCE EXTRACTION; S-PARAMETER MEASUREMENTS; SCHOTTKY GATE; ZERO BIAS CONDITIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 85066300512     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1993.336593     Document Type: Conference Paper

References (6)

1. G. Dambrine, A. Cappy, F. Helidore, and E. Playez, "A New Method for Determining the FET Small Signal Equivalent Circuit," IEEE Trans. MUT, vol. 36, no. 7, pp. 1151- 11S9, July 1988.
2. R Vogel, "The Application of RF Wafer Probing to MESFET Modeling," Microwave Journal, pp. 153-162, Nov. 1988.
3. M. Berroth and R Bosch, "Broad-Band Determination of the FET Smal-Signal Equivalent Circuit," EEE Trans. MTT, vol. 38, no. 7, pp. 891-89S, July, 1990.
4. R Anholt and S. Swirhun, "Equivalent Circuit Parameter Extraction for Cold GaAs MESFETs," IEEE Trans. MUT, vol. 39, no. 7, pp. 1243 -1247, July 1991.
5. K Lee et al., "Source, Drain, and Gate Resistances in GaAs MESFETs," IEEE Trans. Electron Devices, vol. ED-32, pp. 987-992, June 1985.
6. R Anholt and S. Swirhun, "Measurement and Analysis of GaAs MESFET Parasitic Capacitances," EEE Trans. MUT, vol. 39, no. 7, July 1991, pp. 1247-1251.