Bipolar Stressing, Breakdown, and Trap Generation in Thin Silicon Oxides

IEEE Transactions on Electron Devices

Volumn 41, Issue 6, 1994, Pages 936-940

  Dumin, D J ^a   Vanchinathan, S ^a  

^a CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICA; STRESSES;

BIPOLAR STRESSING; CHARGE TO BREAKDOWN; THIN SILICON OXIDE FILMS; TIME TO BREAKDOWN; TRAP GENERATION;

THIN FILM DEVICES;

EID: 0028444966     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293305     Document Type: Article

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