Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions

IEEE Transactions on Electron Devices

Volumn 40, Issue 12, 1993, Pages 2287-2295

  Rosenbaum, Elyse ^a   Liu, Zhihong ^b   Hu, Chenming ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; VOLTAGE MEASUREMENT; WAVEFORM ANALYSIS;

BIPOLAR BIAS CONDITIONS; FREQUENCY DEPENDENCE; LIFETIME ENHANCEMENT; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB); TIME TO BREAKDOWN; TRAPPED HOLE DISTRIBUTION;

SILICA;

EID: 0027811720     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.249477     Document Type: Article

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