Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide films

IEEE Transactions on Reliability

Volumn 40, Issue 1, 1991, Pages 102-109

  Dumin, D J ^a   Dickerson, K J ^a   Brown, G A ^b  

^a CLEMSON UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Oxide reliability; Thin oxide; Wearout of oxides

Indexed keywords

CAPACITORS - RELIABILITY; ELECTRIC BREAKDOWN; INTEGRATED CIRCUITS - FABRICATION; OXIDES - THIN FILMS; SEMICONDUCTOR DEVICES, MOS;

HIGH-VOLTAGE STRESS MEASUREMENTS; MOS CAPACITORS; OXIDES WEAROUT; THIN SILICON-OXIDE FILMS;

SOLID STATE DEVICES, THIN FILM;

EID: 0026138461     PISSN: 00189529     EISSN: 15581721     Source Type: Journal    
DOI: 10.1109/24.75344     Document Type: Article

References (18)

1. K. Yamabe, K. Taniguchi, “Time dependent dielectric breakdown of thin thermally grown Si02 films”, IEEE Trans. Electron Devices, vol ED-32, 1985 Feb, pp. 423–428.
2. R. Moazzami, J. Lee, I-C. Chen, C. Hu, “Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown”, IEDM Technical Digest, 1988 Dec, pp. 710–713.
3. S. Holland, I-C. Chen, P. Ma, C. Hu, “On physical models for gate oxide breakdown”, IEEE Electron Devices Letters, vol EDL-5, 1984 Aug, pp. 302–304.
4. W.K. Meyer, D.L. Crook, “Model for oxide wearout due to charge trapping”, Proc. Int'lReliability Physics Symp., 1983 Apr, pp. 242–246.
5. M. Lenzinger, E. Snow, “Fowler-Nordheim tunneling into thermally grown Si02 films”, J. Applied Physics, vol 40, 1969 Jan, pp. 278–283.
6. D.R. Wolters, J.J. van der Schoot, T. Poorter, “Damage caused by charge injection”, in (J.F. Verweij & D.R. Wolters, eds), Insulating Films on Semiconductors, 1983, pp. 256–260, 1983; North Holland.
7. D.A. Baglee, “Characteristics and reliability of 100 A oxides”, Proc. Int'l Reliability Physics Symp., 1984 April, pp. 152–157.
8. J.W. McPherson, D.A. Baglee, “Acceleration factors for thin gate oxide stressing”, Proc. Int'l Reliability Physics Symp., 1985 Apr, pp. 1–5.
9. W.K. Meyer, D.W. Crook, “A non-aging screen to prevent wearout of ultra-thin dielectrics”, Proc. Int'l Reliability Physics Symp., 1985 Apr, pp. 6–10.
10. M. Kerber, U. Schwalke, “Interface degradation and dielectric breakdown of thin oxides due to homogeneous charge injection”, Proc. Int'l Reliability Physics Symp., 1989 Apr, pp. 17–21.
11. E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, 1982; John Wiley & Sons.
12. D.J. Dumin, K.J. Dickerson, M.D. Hall, G.A. Brown, “Polarity dependence of thin oxide wearout”, Proc. Int Reliability Physics Symp., 1989 Apr, pp. 28–33.
13. I-C. Chen, S. Holland, C. Hu, “Electrical breakdown in thin gate and tunneling oxides”, IEEE Trans. Electron Devices, vol ED-32, 1985 Feb, pp. 413–422.
14. Dumin, Dickerson, Hall, Vigrass, Brown, “Correlation of wearout and breakdown in sub-10 nm silicon oxide”, IEDM Technical Digest, 1988 Dec, pp. 718–721.
15. DiMaria, Theis, Kirtley, Pesavento, Dong, Brorson, “Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films”, J. Applied Physics, vol 57, 1985 Feb, pp. 1214–1239.
16. DiMaria, Fischetti, Pesavento, Solomon, Dong, “Direct measurement of the energy distribution of hot electrons in silicon dioxide' ', J. Applied Physics, vol 58, 1985 Aug, pp. 1303–1313.
17. W.J. Vigrass, A Comparison of Oxide Wearout Resulting from Pulsed or DC Charge Injection on P-Type Substrates, 1988 (Master's-Degree Thesis); Clemson University, South Carolina USA.
18. W. Hansen, W. Weber, “The effect of transients on hot carriers”, IEEE Electron Devices Letters, vol 12, 1989 Jun, pp. 252–254.