Low Pressure Chemical Vapor Deposition of Si1-xGexFilms on SiO2Characterization and Modeling

Journal of the Electrochemical Society

Volumn 142, Issue 5, 1995, Pages 1566-1572

  Cao, Min ^a   Wang, Albert ^a   Saraswat, Krishna C ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FRACTION; DEPOSITION RATE; GERMANE; MOLE FRACTION; REACTION RATE LIMITED REGIME; SILANE;

CHARACTERIZATION; FLOW CONTROL; GERMANIUM COMPOUNDS; MATHEMATICAL MODELS; METALLIC FILMS; NUCLEATION; PRESSURE CONTROL; PROBABILITY; PYROLYSIS; SILICA; SILICON ALLOYS; TEMPERATURE;

CHEMICAL VAPOR DEPOSITION;

EID: 0029310168     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2048614     Document Type: Article

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