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Volumn 142, Issue 9, 1995, Pages 3220-3225

Effects of Ge on Material and Electrical Properties of Polycrystalline Si1_xGexfor Thin-Film Transistors

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; GERMANIUM; GRAIN SIZE AND SHAPE; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; THIN FILM DEVICES; TRANSISTORS;

EID: 0029378216     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2048718     Document Type: Article
Times cited : (44)

References (26)
  • 3
    • 84975397436 scopus 로고
    • IEDM Tech. Dig.
    • T. Uchida, IEDM Tech. Dig., 5 (1991).
    • (1991) , pp. 5
    • Uchida, T.1
  • 6
    • 0024870484 scopus 로고
    • IEDM Tech. Dig.
    • H. Ohshima and S. Morozumi, IEDM Tech. Dig., 157 (1989).
    • (1989) , pp. 157
    • Ohshima, H.1    Morozumi, S.2
  • 11
    • 84975406123 scopus 로고
    • Editors, MRS Symp. Proc., 317, p. 603, MRS, Pittsburgh, PA
    • Eaglesham, Editors, MRS Symp. Proc., 317, p. 603, MRS, Pittsburgh, PA (1994).
    • (1994) Eaglesham


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.