Effect of a silicon interlayer in low-temperature poly-SiGe thin film transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3014, Issue , 1997, Pages 133-140

  Wang, Albert W ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

Cap; Interlayer; Low temperature process; Polycrystalline silicon germanium; Thin film transistor

Indexed keywords

APPLICATIONS; BICMOS TECHNOLOGY; DRAIN CURRENT; ELECTRIC PROPERTIES; FLAT PANEL DISPLAYS; GATES (TRANSISTOR); GERMANIUM; LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; MOS DEVICES; NONMETALS; POLYSILICON; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

CAP; INTERLAYER; LOW-TEMPERATURE PROCESS; POLYCRYSTALLINE SILICON-GERMANIUM; THIN FILM TRANSISTOR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0345409143     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.270288     Document Type: Conference Paper

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