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Volumn 141, Issue 8, 1994, Pages 2235-2241

Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTALLINE MATERIALS; GRAIN SIZE AND SHAPE; PHASE TRANSITIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICA; SILICON ALLOYS; THIN FILM DEVICES; TWINNING;

EID: 0028482908     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2055095     Document Type: Article
Times cited : (88)

References (27)
  • 10
    • 4244041582 scopus 로고
    • G. R. Srinivasan, K. Taniguichi, and C. S. Murthy, Editors, PV 93–6, The Electrochemical Society Proceedings Series, Pennington, NJ
    • M. Cao, A. W. Wang, and K. C. Saraswat, in Process Physics and Modeling in Semiconductor Technology, G. R. Srinivasan, K. Taniguichi, and C. S. Murthy, Editors, PV 93–6, p. 350, The Electrochemical Society Proceedings Series, Pennington, NJ (1993).
    • (1993) Process Physics and Modeling in Semiconductor Technology , pp. 350
    • Cao, M.1    Wang, A.W.2    Saraswat, K.C.3
  • 15
    • 0008601277 scopus 로고
    • Editor, North-Hol-land Pub. Co., Amsterdam
    • Physical Metallurgy, R. W. Cahn, Editor, North-Hol-land Pub. Co., Amsterdam (1965).
    • (1965) Physical Metallurgy
    • Cahn, R.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.