-
1
-
-
84945714601
-
Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline silicon
-
Feb.
-
S. D. S. Malhi, H. Shichijo, S. K. Banerjee, R. Sundaresan, M. Elahy, G. P. Pollack, W. F. Richardson, A. H. Shah, L. R. Hite, R. H. Womack, P. K. Chatterjee, and H. W. Lam, “Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline silicon,” IEEE Trans. Electron Devices, vol. ED-32, pp. 258–281, Feb. 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 258-281
-
-
Malhi, S.D.S.1
Shichijo, H.2
Banerjee, S.K.3
Sundaresan, R.4
Elahy, M.5
Pollack, G.P.6
Richardson, W.F.7
Shah, A.H.8
Hite, L.R.9
Womack, R.H.10
Chatterjee, P.K.11
Lam, H.W.12
-
2
-
-
0022435662
-
Completely integrated contact-type linear image sensor
-
Aug.
-
S. Morozumi, H. Kurihara, T. Takeshita, H. Oka, and K. Hasegawa, “Completely integrated contact-type linear image sensor,” IEEE Trans. Electron Devices, vol. ED-32, pp. 15461550, Aug. 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
-
-
Morozumi, S.1
Kurihara, H.2
Takeshita, T.3
Oka, H.4
Hasegawa, K.5
-
3
-
-
0024126858
-
A thermal printer head with CMOS thin-film transistors and heating elements integrated on a chip
-
Y. Hayashi, H. Hayashi, M. Negishi, T. Matsushita, M. Yagino, and T. Endo. “A thermal printer head with CMOS thin-film transistors and heating elements integrated on a chip,” in IEEE Inr. Solid-State Circuits Conf., Dig. of Techn. Papers, pp. 266267, 1988.
-
(1988)
IEEE Inr. Solid-State Circuits Conf.
-
-
Hayashi, Y.1
Hayashi, H.2
Negishi, M.3
Matsushita, T.4
Yagino, M.5
Endo, T.6
-
4
-
-
0021613530
-
4.25- in. and 1.51-in. B/W and full/color LC video displays addressed by poly-Si TFTs
-
S. Morozumi, K. Oguchi, T. Misawa, R. Araki, and H. Ohshima, “4.25- in. and 1.51-in. B/W and full/color LC video displays addressed by poly-Si TFTs,” in Society for lnf Display Int. Symp., Dig. Techn. Papers, vol. 15, pp. 316–319, 1984.
-
(1984)
Society for lnf Display Int. Symp.
, vol.15
, pp. 316-319
-
-
Morozumi, S.1
Oguchi, K.2
Misawa, T.3
Araki, R.4
Ohshima, H.5
-
5
-
-
84946244967
-
Completely integrated a-Si/a-SiC heterojunction contact-type linear image sensor with poly-Si TFT drivers
-
T. Takeshita, H. Kurihara, H. Ohshima, I. Yudasaka, and S. Morozumi, “Completely integrated a-Si/a-SiC heterojunction contact-type linear image sensor with poly-Si TFT drivers,” in Society for h f. Display Int. Svmp., Dig. Techn. Papers. vol. 20, pp. 255–258, 1989.
-
(1989)
Society for h f. Display Int. Svmp.
, vol.20
, pp. 255-258
-
-
Takeshita, T.1
Kurihara, H.2
Ohshima, H.3
Yudasaka, I.4
Morozumi, S.5
-
6
-
-
0024739599
-
Peripheral circuit integrated poly-Si TFT LCD with gray scale representation
-
Sept.
-
J.-I. Ohwada, M. Takabatake, Y. A. Ono, A. Mimura, K. Ono, and N. Konishi, “Peripheral circuit integrated poly-Si TFT LCD with gray scale representation,” IEEE Trans. Electroil Devices, vol. 36, pp. 1923–1928. Sept. 1989.
-
(1989)
IEEE Trans. Electroil Devices
, vol.36
, pp. 1923-1928
-
-
Ohwada, J.-I.1
Takabatake, M.2
Ono, Y.A.3
Mimura, A.4
Ono, K.5
Konishi, N.6
-
7
-
-
84954134782
-
A low-temperature (1550OC) silicongermanium thin-film transistor technology for large-area electronics
-
T.-J. King and K. C. Saraswat, “A low-temperature (1550OC) silicongermanium thin-film transistor technology for large-area electronics,” in Int. Electron Devices Meet., Techn. Dig., pp. 567–570. 1991.
-
(1991)
Int. Electron Devices Meet.
, pp. 567-570
-
-
King, T.-J.1
Saraswat, K.C.2
-
8
-
-
0026237465
-
A variable-workfunction polycrystalline Si] -,Ge, gate material for submicrometer CMOS technologies
-
Oct.
-
T.-J. King. J. R. Pfiester, and K. C. Saraswat, “A variable-workfunction polycrystalline Si] -,Ge, gate material for submicrometer CMOS technologies,” IEEE Electron Device Left., vol. 12. pp. 533–535, Oct. 1991.
-
(1991)
IEEE Electron Device Left.
, vol.12
, pp. 533-535
-
-
King, T.-J.1
Pfiester, J.R.2
Saraswat, K.C.3
-
9
-
-
0028482908
-
Deposition and properties of low-pressure chemical-vapor deposited polycrystalline silicon-Germanium films
-
T. King and K. Saraswat, “Deposition and properties of low-pressure chemical-vapor deposited polycrystalline silicon-Germanium films,” J. Electrochem. Society, vol. 141, no. 8, p. 2235. 1994.
-
(1994)
J. Electrochem. Society
, vol.141
, Issue.8
, pp. 2235
-
-
King, T.1
Saraswat, K.2
-
10
-
-
0025578484
-
A polycrystalline-Si, --1 Ge,. -gate CMOS technology
-
T.-J. King. J. R. Pfiester, J. D. Shott. J. P. McVittie, and K. C. Saraswat, “A polycrystalline-Si, --1 Ge,. -gate CMOS technology,” in Int. Electron Devices Meet., Techn. Dig., pp. 253–256, 1990.
-
(1990)
Int. Electron Devices Meet.
, pp. 253-256
-
-
King, T.-J.1
Pfiester, J.R.2
Shott, J.D.3
McVittie, J.P.4
Saraswat, K.C.5
-
11
-
-
0024886320
-
Silicon-germanium alloys and heterostructures: Optical and electronic properties
-
T. P. Pearsall, “Silicon-germanium alloys and heterostructures: Optical and electronic properties,” CRC Crirical Reviews in Solid Stare and Marerials Sciences, vol. 15, no. 6, pp. 551–600, 1989.
-
(1989)
CRC Crirical Reviews in Solid Stare and Marerials Sciences
, vol.15
, Issue.6
, pp. 551-600
-
-
Pearsall, T.P.1
-
12
-
-
0022026835
-
Hydrogenation by ion implantation for scaled SOIPMOS transistors
-
Mar.
-
H. J. Singh. K. C. Saraswat, J. D. Shott. J. P. McVittie. and J. D. Meindl, “Hydrogenation by ion implantation for scaled SOIPMOS transistors.” IEEE Electron Device Letr. vol. EDL-6, pp. 139–141. Mar. 1985.
-
(1985)
IEEE Electron Device Letr.
, vol.EDL-6
, pp. 139-141
-
-
Singh, H.J.1
Saraswat, K.C.2
Shott, J.D.3
McVittie, J.P.4
Meindl, J.D.5
-
13
-
-
0024169554
-
Small geometry effects in r i - and i)-channel polysilicon thin film transistors
-
A. G. Lewis, I-W. Wu, T. Y. Huang, M. Koyanagi, A. Chiang, and R. H. Bruce, “Small geometry effects in r i - and i)-channel polysilicon thin film transistors.” in Inr. Electron Devices Meer., TecAnical Dig., pp. 260–263, 1988.
-
(1988)
Inr. Electron Devices Meer.
, pp. 260-263
-
-
Lewis, A.G.1
Wu, I.-W.2
Huang, T.Y.3
Koyanagi, M.4
Chiang, A.5
Bruce, R.H.6
-
14
-
-
0022119783
-
Anomalous leakage current in LPCVD polysilicon MOSFET's
-
Sept.
-
J. G. Fossum. A. Ortiz-Conde. H. Shichijo, and S. K. Banerjee. “Anomalous leakage current in LPCVD polysilicon MOSFET's,” fEEE Trans. Electron Devices, vol. ED-32, pp. 1878–1884. Sept. 1985.
-
(1985)
fEEE Trans. Electron Devices
, vol.ED-32
, pp. 1878-1884
-
-
Fossum, J.G.1
Ortiz-Conde, A.2
Shichijo, H.3
Banerjee, S.K.4
-
15
-
-
0024480983
-
A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors
-
Jan.
-
B. Faughnan and A. C. Ipri, “A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors.” fEEE Pans. Electron Devices, vol. 36, pp. 101–107, Jan. 1989.
-
(1989)
fEEE Pans. Electron Devices
, vol.36
, pp. 101-107
-
-
Faughnan, B.1
Ipri, A.C.2
-
16
-
-
0026151511
-
Avalanche-induced effects in polysilicon thin-film transistors
-
May
-
M. Hack and A. G. Lewis, “Avalanche-induced effects in polysilicon thin-film transistors.” fEEE Elecfron Device Lett. vol. 12, pp. 203–205, May 1991.
-
(1991)
fEEE Elecfron Device Lett.
, vol.12
, pp. 203-205
-
-
Hack, M.1
Lewis, A.G.2
-
17
-
-
0025955121
-
Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film
-
Jan.
-
N. Yamauchi, J.-.I. J. Hajjar, and R. Reif, “Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film,” fEEE Trans. Elecrmn Devices, vol. 38, pp. 55–60, Jan. 1991.
-
(1991)
fEEE Trans. Elecrmn Devices
, vol.38
, pp. 55-60
-
-
Yamauchi, N.1
Hajjar, J.-.I.J.2
Reif, R.3
-
18
-
-
0024627376
-
High-performance poly-Si TFT's with ECR-plasma hydrogen passivation
-
Mar.
-
T. Unagami and T. Takeshita. “High-performance poly-Si TFT's with ECR-plasma hydrogen passivation,” IEEE Trans. Electron Devices, vol. 36, pp. 529–533, Mar. 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 529-533
-
-
Unagami, T.1
Takeshita, T.2
-
19
-
-
0025575393
-
A polysilicon transistor technology for large capacity SRAMs
-
S. Ikeda, S. Hashiba, I. Kuramoto, H. Katoh, S. Ariga, T. Yamanaka. T. Hashimoto, N. Hashimoto. and S. Meguro, “A polysilicon transistor technology for large capacity SRAMs,” in Int. Electron Devices Meet. Tec,hn. Dis., pp. 469472, 1990.
-
(1990)
Int. Electron Devices Meet. Tec
-
-
Ikeda, S.1
Hashiba, S.2
Kuramoto, I.3
Katoh, H.4
Ariga, S.5
Yamanaka, T.6
Hashimoto, T.7
Hashimoto, N.8
Meguro, S.9
-
20
-
-
0025575971
-
Active matrix liquid crystal display design using low and high temperature processed polysilicon TFTs
-
A. G. Lewis. I-W. Wu, T. Y. Huang, A. Chiang. and R. H. Bruce. “Active matrix liquid crystal display design using low and high temperature processed polysilicon TFTs.” in In!. Electron Devices Meet., Tech. Dig., pp. 843–846, 1990.
-
(1990)
In!. Electron Devices Meet.
, pp. 843-846
-
-
Lewis, A.G.1
Wu, I-W.2
Huang, T.Y.3
Chiang, A.4
Bruce, R.H.5
-
21
-
-
0028374842
-
Electrical properties of heavily doped polycrystalline silicon-germanium films
-
Feb.
-
T.-J. King, J. P. McVittie, K. C. Saraswat, and J. R. Pfiester, “Electrical properties of heavily doped polycrystalline silicon-germanium films,” IEEE Trans. Electron Devices, vol. 41, pp. 228–232, Feb. 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 228-232
-
-
King, T.-J.1
McVittie, J.P.2
Saraswat, K.C.3
Pfiester, J.R.4
-
23
-
-
84946244875
-
Effects of trap state on field-effect mobility of MOSFET’s formed on large-grain polysilicon films
-
T. Katoh and N. Hirashita, “Effects of trap state on field-effect mobility of MOSFET’s formed on large-grain polysilicon films,” Japan. J. Appl. Phys., vol. 28, no. 12, pp. L2291-L2293, 1989.
-
(1989)
Japan. J. Appl. Phys.
, vol.28
, Issue.12
-
-
Katoh, T.1
Hirashita, N.2
-
24
-
-
0026854110
-
Analysis of current-voltage characteristics of low-temperature-processed polysilicon thin-film transistors
-
Apr.
-
K. Ono, T. Aoyama, N. Konishi, and K. Miyata, “Analysis of current-voltage characteristics of low-temperature-processed polysilicon thin-film transistors,” IEEE Trans. Electron Devices, vol. 39, pp. 792–802, Apr. 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 792-802
-
-
Ono, K.1
Aoyama, T.2
Konishi, N.3
Miyata, K.4
-
25
-
-
0024015754
-
Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon
-
G. Fortunato, D. B. Meakin, P. Migliorato, and P. G. Le Comber, “Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon,” Philosoph. Mag. B, vol. 57, no. 5, pp. 573–586, 1988.
-
(1988)
Philosoph. Mag. B
, vol.57
, Issue.5
, pp. 573-586
-
-
Fortunato, G.1
Meakin, D.B.2
Migliorato, P.3
Le Comber, P.G.4
-
26
-
-
0026140319
-
Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation
-
Apr.
-
I-W. Wu, T.-Y. Huang, W. B. Jackson, A. G. Lewis, and A. Chiang, “Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation,” IEEE Electron Device Lett., vol. 12, pp. 181–183, Apr. 1991.
-
(1991)
IEEE Electron Device Lett.
, vol.12
, pp. 181-183
-
-
Wu, I-W.1
Huang, T.-Y.2
Jackson, W.B.3
Lewis, A.G.4
Chiang, A.5
-
27
-
-
0025417055
-
Mechanism of device degradation in n- and p-channel polysilicon TFT’s by electrical stressing
-
Apr.
-
I-W. Wu, W. B. Jackson, T.-Y. Huang, A. G. Lewis, and A. Chiang, “Mechanism of device degradation in n- and p-channel polysilicon TFT’s by electrical stressing,” IEEE Electron Device Lett., vol. 11, pp. 167–170, Apr. 1990.
-
(1990)
IEEE Electron Device Lett.
, vol.11
, pp. 167-170
-
-
Wu, I-W.1
Jackson, W.B.2
Huang, T.-Y.3
Lewis, A.G.4
Chiang, A.5
-
28
-
-
84942391443
-
Effects of solid phase crystallization and LDD doping on leakage current distributions in poly-Si TFTs with multiple gate structures
-
I-W. Wu, A. Lewis, and A. Chiang, “Effects of solid phase crystallization and LDD doping on leakage current distributions in poly-Si TFTs with multiple gate structures,” in Proc. 12th Int. Display Res. Conf., pp. 455–458, 1992.
-
(1992)
Proc. 12th Int. Display Res. Conf.
, pp. 455-458
-
-
Wu, I-W.1
Lewis, A.2
Chiang, A.3
-
29
-
-
0027591006
-
Physical models for degradation effects in polysilicon thin-film transistors
-
May
-
M. Hack, A. G. Lewis, and I-W. Wu, “Physical models for degradation effects in polysilicon thin-film transistors,” IEEE Trans. Electron Devices, vol. 40, pp. 890–891, May 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 890-891
-
-
Hack, M.1
Lewis, A.G.2
Wu, I-W.3
-
30
-
-
36449002591
-
Field-effect conductance activation energy in an undoped polycrystalline silicon thin-film transistor
-
C. A. Dimitriadis, N. A. Economou, and P. A. Coxon, “Field-effect conductance activation energy in an undoped polycrystalline silicon thin-film transistor,” Appl. Phys. Lett., vol. 59, no. 2, pp. 172–174, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, Issue.2
, pp. 172-174
-
-
Dimitriadis, C.A.1
Economou, N.A.2
Coxon, P.A.3
-
31
-
-
0025460795
-
Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors
-
July
-
B. A. Khan and R. Pandya, “Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors,” IEEE Trans. Electron Devices, vol. 37, pp. 1727–1734, July 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 1727-1734
-
-
Khan, B.A.1
Pandya, R.2
-
32
-
-
0003491480
-
Field-effects in polycrystalline-silicon films
-
T. I. Kamins, “Field-effects in polycrystalline-silicon films,” Solid-State Electron., vol. 15, pp. 789–799, 1972.
-
(1972)
Solid-State Electron.
, vol.15
, pp. 789-799
-
-
Kamins, T.I.1
-
33
-
-
42149158709
-
Measurement and calculation of the carrier concentration in polycrystalline germanium thin films
-
H. J. Moller and V. Schlichting, “Measurement and calculation of the carrier concentration in polycrystalline germanium thin films,” in Springer Proc. in Phys., Vol. 35: Polycrystalline Semiconductors, pp. 326–331, 1989.
-
(1989)
Springer Proc. in Phys.
, vol.35
, pp. 326-331
-
-
Moller, H.J.1
Schlichting, V.2
-
34
-
-
84954188772
-
1 GHz integrated poly-Si & -SiGe photoconductors with BiCMOS compatibility
-
A. Hai, J. D. Morse, and R. W. Dutton, “1 GHz integrated poly-Si & -SiGe photoconductors with BiCMOS compatibility,” in Int. Electron Devices Meet., Techn. Dig., pp. 41—44, 1991.
-
(1991)
Int. Electron Devices Meet.
-
-
Hai, A.1
Morse, J.D.2
Dutton, R.W.3
-
35
-
-
0026880856
-
Low-temperature (<550°C) fabrication of poly-Si thin-film transistors
-
June
-
T.-J. King and K. C. Saraswat, “Low-temperature (<550°C) fabrication of poly-Si thin-film transistors,” IEEE Electron Device Lett., vol. 13, pp. 309–311, June 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
, pp. 309-311
-
-
King, T.-J.1
Saraswat, K.C.2
-
36
-
-
0027814115
-
Analysis of leakage currents in poly-silicon thin film transistors
-
M. Hack, I-W. Wu, T. J. King, and A. G. Lewis, “Analysis of leakage currents in poly-silicon thin film transistors,” in Int. Electron Devices Meet., Techn. Dig., pp. 385–388, 1993.
-
(1993)
Int. Electron Devices Meet.
, pp. 385-388
-
-
Hack, M.1
Wu, I-W.2
King, T.J.3
Lewis, A.G.4
-
37
-
-
36149024990
-
Intrinsic optical absorption in germanium-silicon alloys
-
R. Braunstein, A. R. Moore, and F. Herman, “Intrinsic optical absorption in germanium-silicon alloys,” Phys. Rev., vol. 109, no. 3, pp. 695–710. 1958.
-
(1958)
Phys. Rev.
, vol.109
, Issue.3
, pp. 695-710
-
-
Braunstein, R.1
Moore, A.R.2
Herman, F.3
-
38
-
-
0024751582
-
Bandgap and transport properties of Si1_xGex by analysis of nearly Ideal Si/Si1_xGex/Si heterojunction bipolar transistors
-
Oct.
-
C. A. King, J. L. Hoyt, and J. F. Gibbons, “Bandgap and transport properties of Si1_xGex by analysis of nearly Ideal Si/Si1_xGex/Si heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 36, pp. 2093–2104, Oct. 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 2093-2104
-
-
King, C.A.1
Hoyt, J.L.2
Gibbons, J.F.3
-
39
-
-
0013458637
-
Indirect band gap of coherently strained GexSi1-x bulk alloys on (001) silicon substrates
-
R. People, “Indirect band gap of coherently strained GexSi1-x bulk alloys on (001) silicon substrates,” Phys. Rev. B, vol. 32, no. 2, pp. 1405–1408, 1985.
-
(1985)
Phys. Rev. B
, vol.32
, Issue.2
, pp. 1405-1408
-
-
People, R.1
-
40
-
-
0001888922
-
Measurement of the bandgap of GexSi1_r/Si strained-layer heterostructures
-
D. V. Lang, R. People, J. C. Bean, and A. M. Sergent, “Measurement of the bandgap of GexSi1_r/Si strained-layer heterostructures,” Appl. Phys. Lett., vol. 47, no. 12, 1333–1335, 1985.
-
(1985)
Appl. Phys. Lett.
, vol.47
, Issue.12
-
-
Lang, D.V.1
People, R.2
Bean, J.C.3
Sergent, A.M.4
-
41
-
-
0020099353
-
Theoretical interpretations of the gap state density determined from the field effect and capacitance-voltage characteristics of amorphous semiconductors
-
T. Suzuki, Y. Osaka, and M. Hirose, “Theoretical interpretations of the gap state density determined from the field effect and capacitance-voltage characteristics of amorphous semiconductors,” Japan. J. Appl. Phys., vol. 21, no. 3, L159-L161, 1982.
-
(1982)
Japan. J. Appl. Phys.
, vol.21
, Issue.3
-
-
Suzuki, T.1
Osaka, Y.2
Hirose, M.3
-
42
-
-
0008957105
-
Determination of gap state density in polycrystalline silicon by field-effect conductance
-
G. Fortunato and P. Migliorato, “Determination of gap state density in polycrystalline silicon by field-effect conductance,” Appl. Phys. Lett., vol. 49, no. 16, pp. 1025–1027, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.49
, Issue.16
, pp. 1025-1027
-
-
Fortunato, G.1
Migliorato, P.2
-
43
-
-
0001214531
-
Determination of the density of gap states in undoped polycrystalline Si and Si_{0.8)Ge_(0.2} films
-
M. Cao, T.-J. King, and K. C. Saraswat, “Determination of the density of gap states in undoped polycrystalline Si and Si_{0.8)Ge_(0.2} films,” Appl. Phys. Lett., vol. 61, no. 6, pp. 672–674, 1992.
-
(1992)
Appl. Phys. Lett.
, vol.61
, Issue.6
, pp. 672-674
-
-
Cao, M.1
King, T.-J.2
Saraswat, K.C.3
-
44
-
-
0000617421
-
Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys
-
M. Stutzmann, R. A. Street, C. C. Tsai, J. B. Boyce, and S. E. Ready, “Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys,” J. Appl. Phys., vol. 66, no. 2, pp. 569–592, 1989.
-
(1989)
J. Appl. Phys.
, vol.66
, Issue.2
, pp. 569-592
-
-
Stutzmann, M.1
Street, R.A.2
Tsai, C.C.3
Boyce, J.B.4
Ready, S.E.5
-
45
-
-
0001040041
-
High quality polysilicon by amorphous low pressure chemical vapor deposition
-
G. Harbeke, L. Krausbauer, E. F. Steigmeier, and A. E. Widmer, “High quality polysilicon by amorphous low pressure chemical vapor deposition,” Appl. Phys. Lett., vol. 42, no. 3, pp. 249–251, 1983.
-
(1983)
Appl. Phys. Lett.
, vol.42
, Issue.3
, pp. 249-251
-
-
Harbeke, G.1
Krausbauer, L.2
Steigmeier, E.F.3
Widmer, A.E.4
-
46
-
-
0003690658
-
Crystal forms by solid-state recrystallization of amorphous Si films on SiO2
-
T. Noma, T. Yonehara, and H. Kumomi, “Crystal forms by solid-state recrystallization of amorphous Si films on SiO2,” Appl. Phys. Lett., vol. 59, no. 6, pp. 653–655, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, Issue.6
, pp. 653-655
-
-
Noma, T.1
Yonehara, T.2
Kumomi, H.3
-
47
-
-
33747286911
-
Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films
-
M. K. Hatalis and D. W. Greve, “Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films,” J. Appl. Phys., vol. 63, no. 7, pp. 2260–2266, 1988.
-
(1988)
J. Appl. Phys.
, vol.63
, Issue.7
, pp. 2260-2266
-
-
Hatalis, M.K.1
Greve, D.W.2
-
48
-
-
0000053072
-
Nature of interfaces and oxidation processes in Ge+ -implanted Si
-
A. R. Srivatsa, S. Sharan, O. W. Holland, and J. Narayan, “Nature of interfaces and oxidation processes in Ge+ -implanted Si,” J. Appl. Phys., vol. 65, no. 10, pp. 4028–4032, 1989.
-
(1989)
J. Appl. Phys.
, vol.65
, Issue.10
, pp. 4028-4032
-
-
Srivatsa, A.R.1
Sharan, S.2
Holland, O.W.3
Narayan, J.4
-
49
-
-
84936895344
-
Hydrogenation of Polycrystalline Si TFTs by Ion Implantation
-
M. Cao, T. Zhao, K. C. Saraswat, and J. D. Plummer, “Hydrogenation of Polycrystalline Si TFTs by Ion Implantation,” in Active Matrix Liquid Crystal Displays Symp., pp. 2–5, 1993.
-
(1993)
Active Matrix Liquid Crystal Displays Symp.
, pp. 2-5
-
-
Cao, M.1
Zhao, T.2
Saraswat, K.C.3
Plummer, J.D.4
-
50
-
-
0013242121
-
Oxidation studies of SiGe
-
F. K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, and B. S. Meyerson, “Oxidation studies of SiGe,” J. Appl. Phys., vol. 65, no. 4, pp. 1724–1728, 1989.
-
(1989)
J. Appl. Phys.
, vol.65
, Issue.4
, pp. 1724-1728
-
-
LeGoues, F.K.1
Rosenberg, R.2
Nguyen, T.3
Himpsel, F.4
Meyerson, B.S.5
-
51
-
-
0023133938
-
Effects of H+ implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristics
-
Jan.
-
M. Rodder, D. A. Antoniadis, F. Scholz, and A. Kalnitsky, “Effects of H+ implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristics,” IEEE Electron Device Lett., vol. EDL-8, pp. 27–29, Jan. 1987.
-
(1987)
IEEE Electron Device Lett.
, vol.EDL-8
, pp. 27-29
-
-
Rodder, M.1
Antoniadis, D.A.2
Scholz, F.3
Kalnitsky, A.4
-
52
-
-
0024626536
-
Effects of ECR hydrogen-plasma treatment on narrow-stripe polycrystalline silicon thin-film transistors
-
T. Takeshita, T. Unagami, and O. Kogure, “Effects of ECR hydrogen-plasma treatment on narrow-stripe polycrystalline silicon thin-film transistors,” Japan. J. Appl. Phys., vol. 28, no. 3, pp. L358-L360, 1989.
-
(1989)
Japan. J. Appl. Phys.
, vol.28
, Issue.3
-
-
Takeshita, T.1
Unagami, T.2
Kogure, O.3
-
53
-
-
0343152277
-
Examination of the optimization of thin film tranistor passivation with hydrogen electron cyclotron resonance plasmas
-
R. A. Ditizio, S. J. Fonash, and B.-C. Hseih, “Examination of the optimization of thin film tranistor passivation with hydrogen electron cyclotron resonance plasmas,” J. Vacuum Sci. and Technol. A, vol. 10, no. 1, pp. 59–65, 1992.
-
(1992)
J. Vacuum Sci. and Technol. A
, vol.10
, Issue.1
, pp. 59-65
-
-
Ditizio, R.A.1
Fonash, S.J.2
Hseih, B.-C.3
-
54
-
-
0024870484
-
Future trends for TFT integrated circuits on glass substrates
-
H. Ohshima and S. Morozumi, “Future trends for TFT integrated circuits on glass substrates,” in Int. Electron Devices Meet., Techn. Dig., pp. 157–160, 1989.
-
(1989)
Int. Electron Devices Meet.
, pp. 157-160
-
-
Ohshima, H.1
Morozumi, S.2
|