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Japanese Journal of Applied Physics

Volumn 33, Issue 8, 1994, Pages L1139-L1141

Low thermal budget polycrystalline silicon-germanium thin-film transistors fabricated by rapid thermal annealing

(4) Jurichich, Steve a King, Tsu Jae b Saraswat, Krishna a Mehlhaff, John c

a STANFORD UNIVERSITY (United States)

b PALO ALTO RESEARCH CENTER (United States)

c Aktis Corporation ^* (United States)

Author keywords

Crystallization; Dopant activation; Polysilicon; Rapid thermal annealing; Silicon Germanium; Thin film transistor

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CHEMICAL ACTIVATION; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; GERMANIUM; GLASS; SEMICONDUCTOR DEVICE MANUFACTURE; SHRINKAGE; SILICON; SUBSTRATES; THIN FILMS;

ANNEAL TIMES; CHANNEL CRYSTALLIZATION; DOPANT ACTIVATION; FURNACE ANNEALING; GATE OXIDE; POLYSILICON; RAPID THERMAL ANNEALING; THIN FILM TRANSISTORS; WARPAGE;

TRANSISTORS;

EID: 0028480420 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.33.L1139 Document Type: Article

Times cited : (15)

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- D. Bang, M. Cao, A. W. Wang, K. C. Saraswat and T.-J. King: submitted to Appl. Phys. Lett.
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- Bang, D.¹ Cao, M.² Wang, A.W.³ Saraswat, K.C.⁴ King, T.-J.⁵

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