Helium induced cavities in silicon: Their formation, microstructure and gettering ability

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 451-456

  Kaschny, J R ^a   Fichtner, P F P ^a   Muecklich, A ^a   Kreissig, U ^a   Yankov, R A ^a   Koegler, R ^a   Danilin, A B ^a   Skorupa, W ^a  

^a FWIM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BUBBLES (IN FLUIDS); CRYSTAL MICROSTRUCTURE; HELIUM; ION IMPLANTATION; MATHEMATICAL MODELS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

BUBBLE COARSENING MECHANISMS; ELASTIC RECOIL DETECTION (ERD); GETTERING;

SEMICONDUCTING SILICON;

EID: 0031340336     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-451     Document Type: Conference Paper

References (12)