Secondary defect formation and gettering in MeV self-implanted silicon

Materials Research Society Symposium - Proceedings

Volumn 439, Issue , 1997, Pages 155-160

  Brown, R A ^a   Kononchuk, O ^a   Radzimski, Z ^a   Rozgonyi, G A ^a   Gonzalez, F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ETCHING; ION IMPLANTATION; OPTICAL MICROSCOPY; OXYGEN; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

CZOCHRALSKI (CZ) SILICON; FLOAT ZONE (FZ) SILICON; GETTERING BEHAVIOR;

SEMICONDUCTING SILICON;

EID: 0030653693     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)