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Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 69-74

Metallic impurity gettering in MeV implanted Si

(6) Kononchuk, O a Brown, R A a Koveshnikov, S b Beaman, K a Gonzalez, F c Rozgonyi, G A a

a NORTH CAROLINA STATE UNIVERSITY (United States)

b SEH America (United States)

c MICRON TECHNOLOGY INC (United States)

Author keywords

Gettering; Impurities; Metallic; MeV Ion Implantation; Silicon; SIMS

Indexed keywords

ETCHING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRON; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICON; THERMODYNAMIC STABILITY; COPPER; CRYSTAL GROWTH FROM MELT; ION IMPLANTATION; OPTICAL MICROSCOPY; RELAXATION PROCESSES; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

CHEMICAL ETCHING; EPITAXIAL SILICON; GETTERING; IMPLANTATION DAMAGE; METALLIC IMPURITY; SECONDARY ION MASS SPECTROSCOPY; VACANCY-RELATED DEFECTS; VACANCY-TYPE DEFECTS;

SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

GETTERING;

EID: 4243898170 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.57-58.69 Document Type: Article

Times cited : (21)

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